Light-induced dangling bonds in hydrogenated amorphous silicon

H. Dersch; J. Stuke; J. Beichler

doi:10.1063/1.92402

journal article Mar 15, 1981

Light-induced dangling bonds in hydrogenated amorphous silicon

H. Dersch J. Stuke J. Beichler

Applied Physics Letters Vol. 38 No. 6 pp. 456-458 · AIP Publishing

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Abstract

After intensive and long illumination of undoped a-Si:H samples the dark ESR signal is considerably enhanced. The g value of 2.0055 and the linewidth DHpp = 6–7 G leads to the conclusion that the light-induced defects are single dangling bonds. They disappear again by thermal anneal at about 220 °C.

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Details

Published: Mar 15, 1981
Vol/Issue: 38(6)
Pages: 456-458

Authors

H

H. Dersch

Fachbereich Physik, University of Marburg, Federal Republic of Germany

J

J. Stuke

Fachbereich Physik, University of Marburg, Federal Republic of Germany

J

J. Beichler

Fachbereich Physik, University of Marburg, Federal Republic of Germany

Cite This Article

H. Dersch, J. Stuke, J. Beichler (1981). Light-induced dangling bonds in hydrogenated amorphous silicon. Applied Physics Letters, 38(6), 456-458. https://doi.org/10.1063/1.92402

Light-induced dangling bonds in hydrogenated amorphous silicon

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