Enhancement of DC/AC resistive switching performance in AlOx memristor by two-technique bilayer approach

Xiao Di Huang; Yi Li; Hao Yang Li; Yi Fan Lu; Kan Hao Xue; Xiang Shui Miao

doi:10.1063/5.0006850

journal article Apr 27, 2020

Enhancement of DC/AC resistive switching performance in AlOx memristor by two-technique bilayer approach

Xiao Di Huang Yi Li

Hao Yang Li Yi Fan Lu Kan Hao Xue Xiang Shui Miao

Applied Physics Letters Vol. 116 No. 17 · AIP Publishing

View at Publisher Save 10.1063/5.0006850

Abstract

In this work, we enhance the DC/AC resistive switching performance in AlOx memristors by using a two-technique bilayer approach. Compared to the single-layer memristors (W/AlOx or Al2O3/Pt), the dual-layer memristor (W/AlOx/AlOy/Pt) shows high uniformity in DC cycling (σ/μ &lt; 0.12), large memory window in AC cycling (&gt;100), fast switching speed (20 ns), high endurance (107 cycles), and high-temperature stability (104 s at 125 °C). These performance enhancements are attributed to the localization of the conductive region after using a dual layer with different defect concentrations. Moreover, the W/AlOx/AlOy/Pt memristor exhibits stable III-bit multilevel storage capability by varying the amplitude of negative pulses. Our results provide an effective strategy to develop high-performance memristors for future memory and computing applications.

Topics

No keywords indexed for this article. Browse by subject →

References

35

[1]

Nature (2020) 10.1038/s41586-020-1942-4

[2]

In-memory computing with resistive switching devices

Daniele Ielmini, H.-S. Philip Wong

Nature Electronics 2018 10.1038/s41928-018-0092-2

[3]

Faraday Discuss. (2019) 10.1039/c8fd00127h

[4]

Nat. Nanotechnol. (2019) 10.1038/s41565-018-0302-0

[5]

MRS Bull. (2018) 10.1557/mrs.2018.96

[6]

(2016)

[7]

Ultrastructural Characterization of the Lower Motor System in a Mouse Model of Krabbe Disease

Valentina Cappello, Laura Marchetti, Paola Parlanti et al.

Scientific Reports 2016 10.1038/s41598-016-0001-8

[8]

(2009)

[9]

J. Electroceram. (2017) 10.1007/s10832-017-0095-9

[10]

Adv. Mater. (2017) 10.1002/adma.201602976

[11]

Adv. Funct. Mater. (2018) 10.1002/adfm.201706927

[12]

J. Appl. Phys. (2011) 10.1063/1.3626816

[13]

Nat. Mater. (2011) 10.1038/nmat3070

[14]

IEEE Electron Device Lett. (2014) 10.1109/led.2013.2288311

[15]

Appl. Phys. Lett. (2017) 10.1063/1.4978033

[16]

IEEE Electron Devices Lett. (2011) 10.1109/led.2011.2125774

[17]

Appl. Phys. Lett. (2017) 10.1063/1.4983465

[18]

R.. Soc. Chem. Adv. (2018) 10.1039/c8ra06230g

[19]

J. Alloys Compd. (2018) 10.1016/j.jallcom.2018.04.179

[20]

ACS Appl. Mater. Interfaces. (2016) 10.1021/acsami.6b08915

[21]

Nanotechnol. (2018) 10.1088/1361-6528/aab6a3

[22]

IEEE Electron Device Lett. (2018) 10.1109/led.2018.2868459

[23]

Sci. Rep. (2014) 10.1038/srep04672

[24]

(2016)

[25]

Nanotechnology (2018) 10.1088/1361-6528/aaa733

[26]

IEEE Electron Device Lett. (2020) 10.1109/led.2020.2977397

[27]

Adv. Electron. Mater. (2019) 10.1002/aelm.201800143

[28]

(2017)

[29]

Appl. Surf. Sci. (2018) 10.1016/j.apsusc.2017.11.016

[30]

ACS Appl. Mater. Interfaces (2018) 10.1021/acsami.7b19586

[31]

Adv. Funct. Mater. (2019) 10.1002/adfm.201808376

[32]

Appl. Phys. Lett. (2015) 10.1063/1.4926921

[33]

Appl. Phys. Lett. (2018) 10.1063/1.5048098

[34]

The future of electronics based on memristive systems

Mohammed A. Zidan, John Paul Strachan, Wei D. Lu

Nature Electronics 2018 10.1038/s41928-017-0006-8

[35]

Appl. Phys. Lett. (2016) 10.1063/1.4965872

Cited By

36

Probing the Effects of the First Atomic Layer on the Dynamic Behavior of Sub-2 nm MgO/Al2O3 Memristors

Angelo Marshall, Ryan Goul · 2025

ACS Applied Materials & Interfa...

Metrics

36

Citations

35

References

Details

Published: Apr 27, 2020
Vol/Issue: 116(17)

Authors

X

Xiao Di Huang