Unraveling optical degradation mechanism of β-Ga2O3 by Si4+ irradiation: A combined experimental and first-principles study

Yuanting Huang; Xiaodong Xu; Xueqiang Yu; Yadong Wei; Tao Ying; Zhongli Liu; Yuhang Jing; Weiqi Li

doi:10.1063/5.0140605

journal article Jul 31, 2023

Unraveling optical degradation mechanism of β-Ga2O3 by Si4+ irradiation: A combined experimental and first-principles study

Yuanting Huang

Zhongli Liu Yuhang Jing

Weiqi Li

Applied Physics Letters Vol. 123 No. 5 · AIP Publishing

View at Publisher Save 10.1063/5.0140605

Abstract

Wide bandgap β-Ga2O3 is an ideal candidate material with broad application prospects for power electronic components in the future. Aiming at the application requirements of β-Ga2O3 in space photoelectric devices, this work studies the influence of 40 MeV Si ion irradiation on the microstructure and optical properties of β-Ga2O3 epi-wafers. Raman spectroscopy analysis confirms that Si ion irradiation destroys the symmetric stretching mode of tetrahedral–octahedral chains in β-Ga2O3 epi-wafers, and the obtained experimental evidence of irradiation leads to the enhanced defect density of VO and VGa–VO from x-ray photoelectron spectroscopy. Combined with first-principles calculations, we conclude that most configurations of VO and VGa–VO are likely non-radiative, leading to quenching of experimental photoluminescence intensity. Unraveling optical degradation mechanism and predicting the optical application of β-Ga2O3 devices in the space environment by combining ground irradiation experiments with first-principles calculations still be one of the focuses of research in the future.

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References

49

[1]

Adv. Funct. Mater. (2019) 10.1002/adfm.201906040

[2]

Mater. Lett. (2017) 10.1016/j.matlet.2017.08.052

[3]

Adv. Opt. Mater. (2020) 10.1002/adom.201901522

[4]

Phys. Status Solidi B (2021) 10.1002/pssb.202000465

[5]

Appl. Phys. Lett. (2013) 10.1063/1.4816759

[6]

J. Mater. Sci.: Mater. Electron. (2017) 10.1007/s10854-017-6882-x

[7]

J. Phys. D: Appl. Phys. (2020) 10.1088/1361-6463/ab8c7d

[8]

J. Phys. D: Appl. Phys. (2021) 10.1088/1361-6463/abdefb

[9]

J. Lumin. (2014) 10.1016/j.jlumin.2013.09.056

[10]

J. Alloys Compd. (2021) 10.1016/j.jallcom.2021.160665

[11]

Crystals (2023) 10.3390/cryst13071045

[12]

Mater. Res. Express (2019) 10.1088/2053-1591/ab17be

[13]

J. Alloys Compd. (2019) 10.1016/j.jallcom.2019.04.253

[14]

Phys. Rev. B (2018) 10.1103/physrevb.97.115163

[15]

J. Vac. Sci. Technol. B (2018) 10.1116/1.5027613

[16]

ECS J. Solid State Sci. Technol. (2019) 10.1149/2.0291907jss

[17]

J. Vac. Sci. Technol. B (2017) 10.1116/1.4983377

[18]

ECS J. Solid State Sci. Technol. (2021) 10.1149/2162-8777/ac2e4d

[19]

APL Mater. (2019) 10.1063/1.5126463

[20]

APL Mater. (2019) 10.1063/1.5054606

[21]

J. Vac. Sci. Technol. B (2016) 10.1116/1.4950872

[22]

ACS Appl. Mater. Interfaces (2017) 10.1021/acsami.7b13881

[23]

Mater. Des. (2022) 10.1016/j.matdes.2022.110944

[24]

Semicond. Sci. Technol. (2018) 10.1088/1361-6641/aad8d1

[25]

Phys. Rev. B (1996) 10.1103/physrevb.54.11169

[26]

Projector augmented-wave method

P. E. Blöchl

Physical Review B 1994 10.1103/physrevb.50.17953

[27]

J. Appl. Phys. (2023) 10.1063/5.0124285

[28]

Phys. Rev. B (2006) 10.1103/physrevb.73.195123

[29]

APL Mater. (2022) 10.1063/5.0081925

[30]

J. Chem. Phys. (2003) 10.1063/1.1564060

[31]

J. Appl. Phys. (2020) 10.1063/1.5140742

[32]

Comput. Mater. Sci. (2022) 10.1016/j.commatsci.2022.111760

[33]

J. Mater. Sci.: Mater. Electron. (2015) 10.1007/s10854-015-2821-x

[34]

J. Mater. Chem. C (2021) 10.1039/d0tc04101g

[35]

J. Appl. Phys. (2005) 10.1063/1.2128044

[36]

Phys. Rev. Mater. (2021) 10.1103/physrevmaterials.5.025402

[37]

ECS J. Solid State Sci. Technol. (2019) 10.1149/2.0121907jss

[38]

J. Mater. Sci. (2019) 10.1007/s10853-019-03663-w

[39]

ECS J. Solid State Sci. Technol. (2017) 10.1149/2.0011702jss

[40]

Phys. Rev. B (2020) 10.1103/physrevb.101.144109

[41]

Chem. Mater. (2021) 10.1021/acs.chemmater.0c02449

[42]

J. Phys. Chem. Lett. (2020) 10.1021/acs.jpclett.0c02530

[43]

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

J. L. Lyons, A. Janotti, C. G. Van de Walle

Physical Review B 2014 10.1103/physrevb.89.035204

[44]

Phys. Chem. (2010) 10.1016/j.chemphys.2010.09.011

[45]

Comput. Mater. Sci. (2014) 10.1016/j.commatsci.2014.02.020

[46]

Phys. Rev. Appl. (2016) 10.1103/physrevapplied.6.064002

[47]

RSC Adv. (2019) 10.1039/c9ra06366h

[48]

Phys. Rev. B (2017) 10.1103/physrevb.95.094105

[49]

Appl. Phys. Lett. (2017) 10.1063/1.4995404

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Metrics

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Citations

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References

Details

Published: Jul 31, 2023
Vol/Issue: 123(5)

Authors

Y

Yuanting Huang