journal article Jun 01, 2024

The evolution of 2D vdW ferroelectric materials: Theoretical prediction, experiment confirmation, applications

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Abstract
Since J. Valasek first discovered ferroelectric materials in 1920, researchers have been exploring continuously in various fields through theory and experiments. With the rapid development of the computing technology, energy efficiency and size requirements of semiconductor devices are becoming increasingly demanding. However, the conventional ferroelectric materials, which have been limited by physical size restrictions, can no longer satisfy the above requirements. Two-dimensional (2D) ferroelectric materials can effectively overcome the size limitation of traditional ferroelectrics due to the weak van der Waals force between layers, which is easy to thin while retaining their own unique properties. Currently, a small number of 2D materials have been proved to be ferroelectric properties by experiments and have shown great application potential in nanoscale electrical and optoelectronic devices, expected to become the leaders of next-generation computing. In this review, the current 2D ferroelectric materials are summarized and discussed in detail from seven aspects: theoretical prediction, fabrication methods, ferroelectric characterization methods, principles of typical 2D ferroelectrics, optimization methods of ferroelectric performance, application, and challenges. Finally, the development of 2D ferroelectric materials looks into the future.
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References
149
[1]
"Piezo-electric and allied phenomena in Rochelle salt" Phys. Rev. (1921) 10.1103/physrev.17.475
[2]
"Eine neue seignette-elektrische substanz" Naturwissenschaften (1935) 10.1007/bf01498152
[3]
"Ferroelectric resistive switching behavior in 2D materials/BiFeO3 hetero-junctions" Nanoscale (2018) 10.1039/c8nr05408h
[4]
"Ferroelectrics and antiferroeletrics" Solid State Phys. (1957) 10.1016/s0081-1947(08)60154-x
[5]
(2001)
[6]
"Mobility engineering and a metal-insulator transition in monolayer MoS2" Nat. Mater. (2013) 10.1038/nmat3687
[7]
Black phosphorus field-effect transistors

Likai Li, Yijun Yu, Guo Jun Ye et al.

Nature Nanotechnology 2014 10.1038/nnano.2014.35
[8]
"Review on recent developments in 2D ferroelectrics: Theories and applications" Adv. Mater. (2021) 10.1002/adma.202005098
[9]
"Room-temperature out-of-plane and in-plane ferroelectricity of two-dimensional β-InSe nanoflakes" Appl. Phys. Lett. (2019) 10.1063/1.5097842
[10]
Towards two-dimensional van der Waals ferroelectrics

Chuanshou Wang, Lu You, David Cobden et al.

Nature Materials 2023 10.1038/s41563-022-01422-y
[11]
"Recent progress on 2D ferroelectric and multiferroic materials, challenges, and opportunity" Emergent Mater. (2021) 10.1007/s42247-021-00223-4
[12]
"2D ferroelectric devices: Working principles and research progress" Phys. Chem. Chem. Phys. (2021) 10.1039/d1cp02788c
[13]
"Recent progress in two-dimensional ferroelectric materials" Adv. Electron. Mater. (2020) 10.1002/aelm.201900818
[14]
"Ferromagnetic and ferroelectric 2D materials for memory application" Nano Res. (2021) 10.1007/s12274-020-2860-3
[15]
"Nonvolatile ferroelectric memory effect in ultrathin α-In2Se3" Adv. Funct. Mater. (2019) 10.1002/adfm.201808606
[16]
"High-performance C60 coupled ferroelectric enhanced MoS2 nonvolatile memory" ACS Appl. Mater. (2023) 10.1021/acsami.3c02610
[17]
"Ferroelectric field-effect transistors based on MoS2 and CuInP2S6 two-dimensional van der Waals heterostructure" ACS Nano (2018) 10.1021/acsnano.8b01810
[18]
"Sustained sub-60 mV/decade switching via the negative capacitance effect in MoS2 transistors" Nano Lett. (2017) 10.1021/acs.nanolett.7b01584
[19]
"Control of molecular orbital ordering using a van der Waals monolayer ferroelectric" Adv. Mater. (2023) 10.1002/adma.202206456
[20]
"Standing waves induced by valley-mismatched domains in ferroelectric SnTe monolayers" Phys. Rev. Lett. (2019) 10.1103/physrevlett.122.206402
[21]
"Vortex-oriented ferroelectric domains in SnTe/PbTe monolayer lateral heterostructures" Adv. Mater. (2021) 10.1002/adma.202102267
[22]
"Enhanced spontaneous polarization in ultrathin SnTe films with layered antipolar structure" Adv. Mater. (2019) 10.1002/adma.201804428
[23]
"Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes" Nano Lett. (2017) 10.1021/acs.nanolett.7b02198
[24]
"An electronic synapse based on 2D ferroelectric CuInP2S6" Adv. Electron. Mater. (2020) 10.1002/aelm.202000760
[25]
"Optoelectronic properties of few-layer MoS2 FET gated by ferroelectric relaxor polymer" ACS Appl. Mater. (2016) 10.1021/acsami.6b10206
[26]
"Interfacial ferroelectricity in marginally twisted 2D semiconductors" Nat. Nanotechnol. (2022) 10.1038/s41565-022-01072-w
[27]
"Direct observation of ferroelectricity in two-dimensional MoS2" npj 2D Mater. Appl. (2022) 10.1038/s41699-022-00298-5
[28]
Ferroelectric switching of a two-dimensional metal

Zaiyao Fei, Wenjin Zhao, Tauno A. Palomaki et al.

Nature 2018 10.1038/s41586-018-0336-3
[29]
"Manipulation of magnetic skyrmion in a 2D van der Waals heterostructure via both electric and magnetic fields" Adv. Funct. Mater. (2021) 10.1002/adfm.202104452
[30]
"Reversible canted persistent spin textures in two-dimensional ferroelectric bilayer WTe2" J. Appl. Phys. (2022) 10.1063/5.0121520
[31]
"Ferroelectricity coexisted with p-orbital ferromagnetism and metallicity in 2D metal oxynitrides" npj Comput. Mater. (2022) 10.1038/s41524-022-00737-3
[32]
"Unprecedented 2D homochiral hybrid lead-Iodide perovskite thermochromic ferroelectrics with ferroelastic switching" Angew. Chem., Int. Ed. (2021) 10.1002/anie.202102195
[33]
"Large electrostrictive coefficient in a 2D hybrid perovskite ferroelectric" J. Am. Chem. Soc. (2021) 10.1021/jacs.0c12907
[34]
"Ferroelectricity in layered bismuth oxide down to 1 nanometer" Science (2023) 10.1126/science.abm5134
[35]
"Two dimensional ferroelectrics: Candidate for controllable physical and chemical applications" WIREs Comput. Mol. Sci. (2021) 10.1002/wcms.1496
[36]
"The rise of two-dimensional van der Waals ferroelectrics" WIREs Comput. Mol. Sci. (2018) 10.1002/wcms.1365
[37]
Crystal Statistics. I. A Two-Dimensional Model with an Order-Disorder Transition

Lars Onsager

Physical Review 1944 10.1103/physrev.65.117
[38]
Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

Fucai Liu, Lu You, Kyle L. Seyler et al.

Nature Communications 2016 10.1038/ncomms12357
[39]
"Two-dimensional materials with piezoelectric and ferroelectric functionalities" npj 2D Mater. Appl. (2018) 10.1038/s41699-018-0063-5
[40]
"Ferroelectrics-integrated 2D devices toward next-generation electronics" ACS Nano (2022) 10.1021/acsnano.2c07281
[41]
"Designing two-dimensional ferroelectric materials from phosphorus-analogue structures" Nano Res. (2022) 10.1007/s12274-022-5213-6
[42]
"Novel 2D ferroelectric PbTe under tension: A first-principles prediction" J. Appl. Phys. (2017) 10.1063/1.4989614
[43]
"Strain engineering for 2D ferroelectricity in Lead chalcogenides" Adv. Electron. Mater. (2020) 10.1002/aelm.201900932
[44]
"Ferroelectricity and phase transitions in monolayer group-IV monochalcogenides" Phys. Rev. Lett. (2016) 10.1103/physrevlett.117.097601
[45]
"Room-temperature ferroelectricity in 1T′-ReS2 multilayers" Phys. Rev. Lett. (2022) 10.1103/physrevlett.128.067601
[46]
"Mexican-hat potential energy surface in two-dimensional III2-VI3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase change" Appl. Phys. Rev. (2021) 10.1063/5.0056695
[47]
Electrically Switchable Polarization in Bi2O2Se Ferroelectric Semiconductors

Weijun Wang, You Meng, Yuxuan Zhang et al.

Advanced Materials 2023 10.1002/adma.202210854
[48]
"Two dimensional ferroelectricity" Ferroelectrics (1976) 10.1080/00150197608241395
[49]
"Observation of piezoelectricity in free-standing monolayer MoS2" Nat. Nanotechnol. (2015) 10.1038/nnano.2014.309
[50]
"Promising ferroelectricity in 2D group IV tellurides: A first-principles study" Appl. Phys. Lett. (2017) 10.1063/1.4996171

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Details
Published
Jun 01, 2024
Vol/Issue
11(2)
Funding
Science and Technology Project of Hebei Education Department Award: 51972094
National Key R&D Plan "Nano Frontier" Key Special Project Award: 2021YFA1200502
Cite This Article
Hong Wang, Yusong Tang, Xu Han, et al. (2024). The evolution of 2D vdW ferroelectric materials: Theoretical prediction, experiment confirmation, applications. Applied Physics Reviews, 11(2). https://doi.org/10.1063/5.0172353
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