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journal article Dec 09, 2024

Capacitance characterization and current transport mechanism of ZnSnN2 heterojunctions

Fan Ye ORCID Zi-Cheng Zhao ORCID Cang-Shuang He Jian-Lin Liang Qian Gao ORCID Yi-Zhu Xie ORCID Dong-Ping Zhang ORCID Xing-Min Cai ORCID
Applied Physics Letters Vol. 125 No. 24 · AIP Publishing
View at Publisher Save 10.1063/5.0241401
Abstract
The trap and defect energy levels of ZnSnN2 and the current transport mechanism of its heterojunctions are studied. A shallow energy level at 105 meV below the conduction band minimum (Ec) of ZnSnN2 is detected and its possible origin is the intrinsic antisite defect of SnZn (Sn occupy the position of Zn in ZnSnN2), besides the traps located at 0.67, 1.03 and 1.06 to 1.21 eV below Ec. The interface states of ZnSnN2 heterojunctions form two discrete energy levels with one at Ec + 0.05 eV and another at Ec−0.03 eV. The current of ZnSnN2 heterojunctions is controlled by thermionic emission at relatively low bias voltage and limited by space charge at higher bias voltage. The barrier height of the heterojunctions is inhomogeneous, which obeys Gaussian distribution and possibly results from interface roughness.
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Details
Published
Dec 09, 2024
Vol/Issue
125(24)
Authors
F
Fan Ye

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University , Shenzhen 518060,

Z
Zi-Cheng Zhao

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University , Shenzhen 518060,

C
Cang-Shuang He

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University , Shenzhen 518060,

J
Jian-Lin Liang

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University , Shenzhen 518060,

Q
Qian Gao

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University , Shenzhen 518060,

Y
Yi-Zhu Xie

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University , Shenzhen 518060,

D
Dong-Ping Zhang

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University , Shenzhen 518060,

X
Xing-Min Cai

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, and State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University , Shenzhen 518060,

Funding
National Natural Science Foundation of China Award: 61674107
Cite This Article
Fan Ye, Zi-Cheng Zhao, Cang-Shuang He, et al. (2024). Capacitance characterization and current transport mechanism of ZnSnN2 heterojunctions. Applied Physics Letters, 125(24). https://doi.org/10.1063/5.0241401
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