Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Min Hoe Cho; Min Jae Kim; Hyunjoo Seul; Pil Sang Yun; Jong Uk Bae; Kwon-Shik Park; Jae Kyeong Jeong

doi:10.1080/15980316.2018.1540365

journal article Open Access Nov 04, 2018

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Min Hoe Cho Min Jae Kim Hyunjoo Seul Pil Sang Yun Jong Uk Bae Kwon-Shik Park Jae Kyeong Jeong

Journal of Information Display Vol. 20 No. 2 pp. 73-80 · Informa UK Limited

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Metrics

85

Citations

14

References

Details

Published: Nov 04, 2018
Vol/Issue: 20(2)
Pages: 73-80
License: View

Authors

M

Min Hoe Cho

Department of Electronics and Computer Engineering, Hanyang University, Seoul, Republic of Korea

M

Min Jae Kim

Department of Electronics and Computer Engineering, Hanyang University, Seoul, Republic of Korea

H

Hyunjoo Seul

Department of Electronics and Computer Engineering, Hanyang University, Seoul, Republic of Korea

P

Pil Sang Yun

R&D Center, LG Display Company, Paju-Si, Kyonggi-Do, Republic of Korea

J

Jong Uk Bae

R&D Center, LG Display Company, Paju-Si, Kyonggi-Do, Republic of Korea

K

Kwon-Shik Park

R&D Center, LG Display Company, Paju-Si, Kyonggi-Do, Republic of Korea

J

Jae Kyeong Jeong

Department of Electronics and Computer Engineering, Hanyang University, Seoul, Republic of Korea

Funding

LG Display

Cite This Article

Min Hoe Cho, Min Jae Kim, Hyunjoo Seul, et al. (2018). Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition. Journal of Information Display, 20(2), 73-80. https://doi.org/10.1080/15980316.2018.1540365

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

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