Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano- and opto-electronic applications

Akhil Sharma; Reyhaneh Mahlouji; Longfei Wu; Marcel A Verheijen; Vincent Vandalon; Shashank Balasubramanyam; Jan P Hofmann; W M M (Erwin) Kessels; Ageeth A Bol

doi:10.1088/1361-6528/ab7593

journal article Open Access Apr 03, 2020

Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano- and opto-electronic applications

Akhil Sharma

Reyhaneh Mahlouji Longfei Wu

Marcel A Verheijen

Vincent Vandalon Shashank Balasubramanyam Jan P Hofmann W M M (Erwin) Kessels Ageeth A Bol

Nanotechnology Vol. 31 No. 25 pp. 255603 · IOP Publishing

View at Publisher Save 10.1088/1361-6528/ab7593

Abstract

Abstract
The patterned growth of transition metal dichalcogenides (TMDs) and their lateral heterostructures is paramount for the fabrication of application-oriented electronics and optoelectronics devices. However, the large scale patterned growth of TMDs remains challenging. Here, we demonstrate the synthesis of patterned polycrystalline 2D MoS2 thin films on device ready SiO2/Si substrates, eliminating any etching and transfer steps using a combination of plasma enhanced atomic layer deposition (PEALD) and thermal sulfurization. As an inherent advantage of ALD, precise thickness control ranging from a monolayer to few-layered MoS2 has been achieved. Furthermore, uniform films with exceptional conformality over 3D structures are obtained. Finally, the approach has been leveraged to obtain in-plane lateral heterostructures of 2D MoS2 and WS2 thin films over a large area which opens up an avenue for their direct integration in future nano- and opto-electronic device applications.

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References

Details

Published: Apr 03, 2020
Vol/Issue: 31(25)
Pages: 255603
License: View

Authors

From the Department of Neurology (W.Z., R.C., S.S., C.W., L.W., J.D., H.S., Y.W.) and Department of Neurosurgery (C.L., J.C., H.Z., F.L., X.J.), Xuanwu Hospital, Capital Medical University, Beijing, China; Department of Neurology, David Geffen School of Medicine at UCLA, Los Angeles, CA (D.L.); and Department of Neurology, Medical University of South Carolina, Charleston (W.F.).

Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands

S

Shashank Balasubramanyam

J

Jan P Hofmann

W

W M M (Erwin) Kessels

A

Ageeth A Bol

Cite This Article

Akhil Sharma, Reyhaneh Mahlouji, Longfei Wu, et al. (2020). Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano- and opto-electronic applications. Nanotechnology, 31(25), 255603. https://doi.org/10.1088/1361-6528/ab7593

Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano- and opto-electronic applications

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