Strong spin-orbit interactions and weak antilocalization in carbon-dopedp-typeGaAs∕AlxGa1−xAsheterostructures

Boris Grbić; Renaud Leturcq; Thomas Ihn; Klaus Ensslin; Dirk Reuter; Andreas D. Wieck

doi:10.1103/physrevb.77.125312

journal article Mar 10, 2008

Strong spin-orbit interactions and weak antilocalization in carbon-dopedp-typeGaAs∕AlxGa1−xAsheterostructures

Boris Grbić Renaud Leturcq Thomas Ihn Klaus Ensslin Dirk Reuter Andreas D. Wieck

Physical Review B Vol. 77 No. 12 · American Physical Society (APS)

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Published: Mar 10, 2008
Vol/Issue: 77(12)
License: View

Authors

Solid State Physics Laboratory, ETH Zürich, CH 8093 Zürich, Switzerland

D

Dirk Reuter

Physics Department and Center for Optoelectronics and Photonics Paderborn (CeOPP), Paderborn University 1 , Warburger Straße 100, 33098 Paderborn, Germany

A

Andreas D. Wieck

Cite This Article

Boris Grbić, Renaud Leturcq, Thomas Ihn, et al. (2008). Strong spin-orbit interactions and weak antilocalization in carbon-dopedp-typeGaAs∕AlxGa1−xAsheterostructures. Physical Review B, 77(12). https://doi.org/10.1103/physrevb.77.125312

Strong spin-orbit interactions and weak antilocalization in carbon-dopedp-typeGaAs∕AlxGa1−xAsheterostructures

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