Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon

G. Casse; P.P. Allport; M. Hanlon

doi:10.1109/23.856475

journal article Jun 01, 2000

Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon

G. Casse

P.P. Allport M. Hanlon

IEEE Transactions on Nuclear Science Vol. 47 No. 3 pp. 527-532 · Institute of Electrical and Electronics Engineers (IEEE)

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References

11

[1]

10.1016/0168-9002(95)00110-7

[2]

hanlon The development of p-type silicon detectors for the High Radiation Regions of the LHC

[3]

10.1016/s0168-9002(98)01476-4

[4]

[5]

10.1016/s0168-9002(98)01467-3

[6]

10.1016/0168-9002(94)01728-x

[7]

[8]

[9]

10.1016/s0168-9002(99)00869-4

[10]

[11]

10.1016/s0168-9002(98)01464-8

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References

Details

Published: Jun 01, 2000
Vol/Issue: 47(3)
Pages: 527-532
License: View

Authors

G

G. Casse

Oliver Lodge Lab., Liverpool Univ., UK

Cite This Article

G. Casse, P.P. Allport, M. Hanlon (2000). Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon. IEEE Transactions on Nuclear Science, 47(3), 527-532. https://doi.org/10.1109/23.856475

Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon

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