Metal–Oxide RRAM

H.-S. Philip Wong; Heng-Yuan Lee; Shimeng Yu; Yu-Sheng Chen; Yi Wu; Pang-Shiu Chen; Byoungil Lee; Frederick T. Chen; Ming-Jinn Tsai

doi:10.1109/jproc.2012.2190369

journal article Jun 01, 2012

Metal–Oxide RRAM

H.-S. Philip Wong

Heng-Yuan Lee Shimeng Yu

Yu-Sheng Chen

Yi Wu

Pang-Shiu Chen Byoungil Lee Frederick T. Chen Ming-Jinn Tsai

Proceedings of the IEEE Vol. 100 No. 6 pp. 1951-1970 · Institute of Electrical and Electronics Engineers (IEEE)

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Metrics

2,522

Citations

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References

Details

Published: Jun 01, 2012
Vol/Issue: 100(6)
Pages: 1951-1970
License: View

Authors

School of Electrical, Computer, and Energy Engineering, Arizona State University , Tempe, Arizona 85287, USA

Cite This Article

H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu, et al. (2012). Metal–Oxide RRAM. Proceedings of the IEEE, 100(6), 1951-1970. https://doi.org/10.1109/jproc.2012.2190369

Metal–Oxide RRAM

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