journal article Oct 01, 2005

Mechanism of current collapse removal in field-plated nitride HFETs

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Electronics Letters 10.1049/el:20010091
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IEEE Transactions on Electron Devices 10.1109/16.129106
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Koudymov "Dynamic current-voltage characteristics of III-N heterostructure field effect transistors"
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Published
Oct 01, 2005
Vol/Issue
26(10)
Pages
704-706
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A. Koudymov, V. Adivarahan, J. Yang, et al. (2005). Mechanism of current collapse removal in field-plated nitride HFETs. IEEE Electron Device Letters, 26(10), 704-706. https://doi.org/10.1109/led.2005.855409