journal article
Aug 01, 2017
Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric
IEEE Electron Device Letters
Vol. 38
No. 8
pp. 1090-1093
·
Institute of Electrical and Electronics Engineers (IEEE)
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References
29
[4]
ahn "Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and RF-sputtered HfO2 gate insulator" Proc IEEE Int Symp Power Semiconductor Devices ICs (2013)
[13]
schroder Semiconductor Material and Device Characterization (2006)
[14]
[15]
choi "Improvement of V $_{th}$ instability in normally-off GaN MIS-HFETs employing PEALD-SiNx as an interfacial layer" IEEE Electron Device Lett (2014) 10.1109/led.2013.2291551
[26]
kang "High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure" Phys Status Solidi A
[27]
freedsman "Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V)" Appl Phys Exp (2014) 10.7567/apex.7.041003
[28]
Metrics
46
Citations
29
References
Details
- Published
- Aug 01, 2017
- Vol/Issue
- 38(8)
- Pages
- 1090-1093
- License
- View
Authors
Funding
NRF of Korea
Award: 2015R1A6A1A03031833
Cite This Article
Hyun-Seop Kim, Sang-Woo Han, Won-Ho Jang, et al. (2017). Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric. IEEE Electron Device Letters, 38(8), 1090-1093. https://doi.org/10.1109/led.2017.2720719
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