journal article Apr 01, 2016

Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source

Felipe S. Neves Paula G. D. Agopian Joao Antonio Martino Bogdan Cretu Rita Rooyackers Anne Vandooren Eddy Simoen

Aaron Voon-Yew Thean

IEEE Transactions on Electron Devices Vol. 63 No. 4 pp. 1658-1665 · Institute of Electrical and Electronics Engineers (IEEE)

View at Publisher Save 10.1109/ted.2016.2533360

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Metrics

117

Citations

18

References

Details

Published: Apr 01, 2016
Vol/Issue: 63(4)
Pages: 1658-1665
License: View

Authors

Felipe S. Neves

Paula G. D. Agopian

Joao Antonio Martino

Rita Rooyackers

Aaron Voon-Yew Thean

Funding

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico, and Fundação de Amparo à Pesquisa do Estado de São Paulo

imec’s Logic Device Program and its Core Partners

Cite This Article

Felipe S. Neves, Paula G. D. Agopian, Joao Antonio Martino, et al. (2016). Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, 63(4), 1658-1665. https://doi.org/10.1109/ted.2016.2533360

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