Quantum Hall Effect in a Gate-Controlled
            p-n
            Junction of Graphene

J. R. Williams; L. DiCarlo; C. M. Marcus

doi:10.1126/science.1144657

journal article Aug 03, 2007

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

J. R. Williams L. DiCarlo C. M. Marcus

Science Vol. 317 No. 5838 pp. 638-641 · American Association for the Advancement of Science (AAAS)

View at Publisher Save 10.1126/science.1144657

Abstract

The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene
p-n
junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and

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times the quantum of conductance,

e
2
/h

, consistent with recent theory. Beyond enabling investigations in condensed-matter physics, the demonstrated local-gating technique sets the foundation for a future graphene-based bipolar technology.

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We thank L. S. Levitov D. A. Abanin C. H. Lewenkopf and P. Jarillo-Herrero for useful discussions; Z. Chen at IBM T. J. Watson Research Center for suggesting the NO 2 functionalization process; and D. Monsma for assistance in implementing it. Research supported in part by INDEX and by the NSF through the Harvard Nanoscale Science and Engineering Center.

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Metrics

929

Citations

28

References

Details

Published: Aug 03, 2007
Vol/Issue: 317(5838)
Pages: 638-641

Authors

J

J. R. Williams

School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, USA.; Department of Physics, Harvard University, Cambridge, MA 02138, USA.

L

L. DiCarlo

School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, USA.; Department of Physics, Harvard University, Cambridge, MA 02138, USA.

C

C. M. Marcus

School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, USA.; Department of Physics, Harvard University, Cambridge, MA 02138, USA.

Cite This Article

J. R. Williams, L. DiCarlo, C. M. Marcus (2007). Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene. Science, 317(5838), 638-641. https://doi.org/10.1126/science.1144657

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

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