High efficiency (ηD&gt;80%) long wavelength (λ&gt;1.25 μm) quantum dot diode lasers on GaAs substrates

S. S. Mikhrin; A. E. Zhukov; A. R. Kovsh; N. A. Maleev; A. P. Vasil’ev; E. S. Semenova; V. M. Ustinov; M. M. Kulagina; E. V. Nikitina; I. P. Soshnikov; Yu. M. Shernyakov; D. A. Livshits; N. V. Kryjanovskaya; D. S. Sizov; M. V. Maksimov; A. F. Tsatsul’nikov; N.N. Ledentsov; D. Bimberg; Zh. I. Alferov

doi:10.1134/1.1521237

journal article Nov 01, 2002

High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

S. S. Mikhrin A. E. Zhukov A. R. Kovsh N. A. Maleev A. P. Vasil’ev E. S. Semenova V. M. Ustinov M. M. Kulagina E. V. Nikitina I. P. Soshnikov Yu. M. Shernyakov D. A. Livshits N. V. Kryjanovskaya D. S. Sizov M. V. Maksimov A. F. Tsatsul’nikov N.N. Ledentsov D. Bimberg Zh. I. Alferov

Semiconductors Vol. 36 No. 11 pp. 1315-1321 · Pleiades Publishing Ltd

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Details

Published: Nov 01, 2002
Vol/Issue: 36(11)
Pages: 1315-1321
License: View

Authors

A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences 3 , Politekhnicheskaya 26, St. Petersburg 194021, Russia

VI Systems GmbH, Hardenbergstrasse 7, Berlin, D-10623, Federal Republic of Germany

D

D. Bimberg

Institute of Solid State Physics and Center for NanoPhotonics, Technische Universität Berlin, Hardenbergstr. 36, Berlin, 10623, Germany

Z

Zh. I. Alferov

Cite This Article

S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, et al. (2002). High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates. Semiconductors, 36(11), 1315-1321. https://doi.org/10.1134/1.1521237

High efficiency (ηD&gt;80%) long wavelength (λ&gt;1.25 μm) quantum dot diode lasers on GaAs substrates

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High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates