journal article Aug 01, 1994

Phosphorus Direct Doping from Vapor Phase into Silicon for Shallow Junctions

Yukihiro Kiyota Tohru Nakamura Kazuhiko Muraki Taroh Inada

Journal of The Electrochemical Society Vol. 141 No. 8 pp. 2241-2244 · The Electrochemical Society

View at Publisher Save 10.1149/1.2055096

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Sticking coefficient of boron and phosphorus on silicon during vapor-phase doping

Yukihiro Kiyota, Taroh Inada · 2001

Journal of Vacuum Science & Tec...

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Published: Aug 01, 1994
Vol/Issue: 141(8)
Pages: 2241-2244
License: View

Authors

Yukihiro Kiyota

Central Research Laboratory, Hitachi Limited, Kokubunji, Tokyo 185, Japan; College of Engineering, Hosei University, Koganei, Tokyo 185, Japan

Central Research Laboratory, Hitachi Limited, Kokubunji, Tokyo 185, Japan; College of Engineering, Hosei University, Koganei, Tokyo 185, Japan

Kazuhiko Muraki

Central Research Laboratory, Hitachi Limited, Kokubunji, Tokyo 185, Japan; College of Engineering, Hosei University, Koganei, Tokyo 185, Japan

Central Research Laboratory, Hitachi Limited, Kokubunji, Tokyo 185, Japan; College of Engineering, Hosei University, Koganei, Tokyo 185, Japan

Cite This Article

Yukihiro Kiyota, Tohru Nakamura, Kazuhiko Muraki, et al. (1994). Phosphorus Direct Doping from Vapor Phase into Silicon for Shallow Junctions. Journal of The Electrochemical Society, 141(8), 2241-2244. https://doi.org/10.1149/1.2055096

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