Diffusion of Ion‐Implanted Arsenic in Thermally Grown SiO2 Films

R. Singh; M. Maier; H. Kräutle; D. R. Young; P. Balk

doi:10.1149/1.2115376

journal article Nov 01, 1984

Diffusion of Ion‐Implanted Arsenic in Thermally Grown SiO2 Films

R. Singh

M. Maier H. Kräutle D. R. Young

P. Balk

Journal of The Electrochemical Society Vol. 131 No. 11 pp. 2645-2651 · The Electrochemical Society

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Published: Nov 01, 1984
Vol/Issue: 131(11)
Pages: 2645-2651
License: View

Authors

R

R. Singh

Institute of Semiconductor Electronics, Technical University Aachen, D‐5100 Aachen, Germany

M

M. Maier

Institute of Semiconductor Electronics, Technical University Aachen, D‐5100 Aachen, Germany

H

H. Kräutle

Institute of Semiconductor Electronics, Technical University Aachen, D‐5100 Aachen, Germany

D

D. R. Young

Institute of Semiconductor Electronics, Technical University Aachen, D‐5100 Aachen, Germany

P

P. Balk

Institute of Semiconductor Electronics, Technical University Aachen, D‐5100 Aachen, Germany

Cite This Article

R. Singh, M. Maier, H. Kräutle, et al. (1984). Diffusion of Ion‐Implanted Arsenic in Thermally Grown SiO2 Films. Journal of The Electrochemical Society, 131(11), 2645-2651. https://doi.org/10.1149/1.2115376

Diffusion of Ion‐Implanted Arsenic in Thermally Grown SiO2 Films

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