Growth and Physical Properties of LPCVD Polycrystalline Silicon Films

G. Harbeke; L. Krausbauer; E. F. Steigmeier; A. E. Widmer; H. F. Kappert; G. Neugebauer

doi:10.1149/1.2115672

journal article Mar 01, 1984

Growth and Physical Properties of LPCVD Polycrystalline Silicon Films

G. Harbeke L. Krausbauer E. F. Steigmeier A. E. Widmer H. F. Kappert G. Neugebauer

Journal of The Electrochemical Society Vol. 131 No. 3 pp. 675-682 · The Electrochemical Society

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Published: Mar 01, 1984
Vol/Issue: 131(3)
Pages: 675-682
License: View

Authors

G

G. Harbeke

Laboratories RCA Limited, Zurich, Switzerland; Institute of Physics, University of Dortmund, Germany

L

L. Krausbauer

Laboratories RCA Limited, Zurich, Switzerland; Institute of Physics, University of Dortmund, Germany

E

E. F. Steigmeier

Laboratories RCA Limited, Zurich, Switzerland; Institute of Physics, University of Dortmund, Germany

A

A. E. Widmer

Laboratories RCA Limited, Zurich, Switzerland; Institute of Physics, University of Dortmund, Germany

H

H. F. Kappert

Laboratories RCA Limited, Zurich, Switzerland; Institute of Physics, University of Dortmund, Germany

G

G. Neugebauer

Laboratories RCA Limited, Zurich, Switzerland; Institute of Physics, University of Dortmund, Germany

Cite This Article

G. Harbeke, L. Krausbauer, E. F. Steigmeier, et al. (1984). Growth and Physical Properties of LPCVD Polycrystalline Silicon Films. Journal of The Electrochemical Society, 131(3), 675-682. https://doi.org/10.1149/1.2115672

Growth and Physical Properties of LPCVD Polycrystalline Silicon Films

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