Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering

Takaya Miyase; Ken Watanabe; Isao Sakaguchi; Naoki Ohashi; Kay Domen; Kenji Nomura; Hidenori Hiramatsu; Hideya Kumomi; Hideo Hosono; Toshio Kamiya

doi:10.1149/2.015409jss

journal article Jan 01, 2014

Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering

Takaya Miyase Ken Watanabe

Isao Sakaguchi Naoki Ohashi

Kay Domen Kenji Nomura

Hidenori Hiramatsu

Hideya Kumomi Hideo Hosono

Toshio Kamiya

ECS Journal of Solid State Science and Technology Vol. 3 No. 9 pp. Q3085-Q3090 · The Electrochemical Society

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References

33

[1]

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Kenji Nomura, Hiromichi Ohta, Akihiro Takagi et al.

Nature 10.1038/nature03090

[2]

10.1093/ietele/e90-c.11.2105

[3]

Lee H. N. Kyung J. W. Kang S. K. Kim D. Y. Sung M. C. Kim S. J. Kim C. N. Kim H. G. Kim S. T. , Proc. Int. Display Workshop 663 (2006).

[4]

10.1016/j.jnoncrysol.2007.10.071

[5]

10.1063/1.3622121

[6]

10.1063/1.3020714

[7]

10.1063/1.3633100

[8]

10.1143/jjap.49.03cb04

[9]

10.1149/2.011301jss

[10]

10.1109/jdt.2009.2021582

[11]

10.1063/1.3112566

[12]

10.1109/jdt.2009.2025521

[13]

10.1149/1.3555070

[14]

10.1016/s0022-3093(98)00188-4

[15]

10.1002/pssa.200983772

[16]

10.1143/jjap.51.021201

[17]

10.1016/j.tsf.2009.10.132

[18]

10.1103/physrevb.86.081202

[19]

10.1063/1.2353811

[20]

10.1063/1.3699372

[21]

Saito N. Ueda T. Nakano S. Hara Y. Miura K. Yamaguchi H. Amemiya I. Ishida A. Matsuura Y. Sasaki A. Tonotani J. Ikagawa M. , Proc. 17th Int. Displ. Workshops, 1855 (2010).

[22]

10.1109/led.2014.2327234

[23]

Kamiya T. Ide K. Nomura K. Kumomi H. Hosono H. , Proc. IDW’13 (2013/12/4-6, Sapporo Convention Center, Sapporo, Japan) 478 (2013).

[24]

10.1063/1.4832076

[25]

Street R. A. , in ‘Hydrogenated amorpghous silicon,’ Cambridge University Press, New York, 1991. 10.1017/cbo9780511525247

[26]

10.1016/0038-1098(75)90284-7

[27]

10.1080/01418637908227166

[28]

10.1063/1.89674

[29]

10.1103/physrevb.74.085201

[30]

10.1007/bf00356211

[31]

10.1116/1.1328055

[32]

10.1063/1.1459102

[33]

10.1063/1.124004

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References

Details

Published: Jan 01, 2014
Vol/Issue: 3(9)
Pages: Q3085-Q3090

Authors

ERATO-SORST, JST, Frontier Collaborative Research Center, Tokyo Institute of Technology, Mail Box S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan, Frontier Collaborative Research Center, Tokyo Institute of Technology, Mail Box S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan, and Materials and Structures Laboratory, Tokyo Institute of Technology, Mail Box R3-4, 4259 Nagatsuta, Yokohama 226-8503, Japan

ERATO-SORST, JST, Frontier Collaborative Research Center, Tokyo Institute of Technology, Mail Box S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan, Frontier Collaborative Research Center, Tokyo Institute of Technology, Mail Box S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan, and Materials and Structures Laboratory, Tokyo Institute of Technology, Mail Box R3-4, 4259 Nagatsuta, Yokohama 226-8503, Japan

T

Toshio Kamiya

ERATO-SORST, JST, Frontier Collaborative Research Center, Tokyo Institute of Technology, Mail Box S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan, Frontier Collaborative Research Center, Tokyo Institute of Technology, Mail Box S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan, and Materials and Structures Laboratory, Tokyo Institute of Technology, Mail Box R3-4, 4259 Nagatsuta, Yokohama 226-8503, Japan

Cite This Article

Takaya Miyase, Ken Watanabe, Isao Sakaguchi, et al. (2014). Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering. ECS Journal of Solid State Science and Technology, 3(9), Q3085-Q3090. https://doi.org/10.1149/2.015409jss

Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering

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