SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

N.S. Boltovets

doi:10.15407/spqeo7.01.060

journal article Mar 30, 2004

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

Semiconductor physics, quantum electronics and optoelectronics Vol. 7 No. 1 pp. 60-62 · National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)

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5. A.A. Lebedev, D.V. Davydov, V.V. Zelenin, M.L. Korogodski. Investigation of the surface treatment influence on 6H-SiC Schottky diodes // Semiconductors, 33, pp. 959-961 (1999). 10.1134/1.1187802

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7. N.S. Boltovets, A.V. Zorenko, V.N. Ivanov, S.I. Vlaskina, R.V. Konakova, Ya.Ya. Kudryk, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin, S.K. Abdizhaliev. Peculiarites of the Formation and Thermal Stability of Barrier Contacts in High-Sensitivity Silicon Carbide Detector Diodes // Technical Physics Letters, 29, pp. 22-25 (2003). 10.1134/1.1544337

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8. N.S. Boltovets, V.N. Ivanov, S.K. Abdizhaliev, R.V. Konakova, Ya.Ya. Kudryk, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin, O.E. Rengevich, E.F. Venger, S.I. Vlaskina, Interactions between phases and thermal stability of TiBx(ZrBx)-n-SiC 6H contacts. // Proc. ASDAM, Smolenice Castle. Slovakia. 14-16 October 2002, pp. 95-98 (2002).

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Published: Mar 30, 2004
Vol/Issue: 7(1)
Pages: 60-62

Authors

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N.S. Boltovets

Cite This Article

N.S. Boltovets (2004). SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers. Semiconductor physics, quantum electronics and optoelectronics, 7(1), 60-62. https://doi.org/10.15407/spqeo7.01.060

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

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