3D Magnetic Memory Using Synthetic Antiferromagnets

H. Jang; F. Ye; Y. Shiota; S. Karube; R. Hisatomi; T. Ono

doi:10.3379/msjmag.2605r001

journal article May 01, 2026

3D Magnetic Memory Using Synthetic Antiferromagnets

H. Jang F. Ye Y. Shiota S. Karube R. Hisatomi T. Ono

Journal of the Magnetics Society of Japan Vol. 50 No. 3 pp. 78-81 · The Magnetics Society of Japan

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Details

Published: May 01, 2026
Vol/Issue: 50(3)
Pages: 78-81

Authors

H

H. Jang

Institute for Chemical Research, Kyoto University

F

F. Ye

Institute for Chemical Research, Kyoto University

Y

Y. Shiota

Institute for Chemical Research, Kyoto University; Center for Spintronics Research Network, Kyoto University

S

S. Karube

Institute for Chemical Research, Kyoto University; Center for Spintronics Research Network, Kyoto University

R

R. Hisatomi

Institute for Chemical Research, Kyoto University; Center for Spintronics Research Network, Kyoto University

T

T. Ono

Institute for Chemical Research, Kyoto University; Center for Spintronics Research Network, Kyoto University

Cite This Article

H. Jang, F. Ye, Y. Shiota, et al. (2026). 3D Magnetic Memory Using Synthetic Antiferromagnets. Journal of the Magnetics Society of Japan, 50(3), 78-81. https://doi.org/10.3379/msjmag.2605r001

3D Magnetic Memory Using Synthetic Antiferromagnets

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