GaN Laser Diode Technology for Visible-Light Communications

Stephen P. Najda; Piotr Perlin; Tadek Suski; Lucja Marona; Mike Leszczyński; Przemek Wisniewski; Szymon Stanczyk; Dario Schiavon; Thomas Slight; Malcolm A. Watson; Steffan Gwyn; Anthony E. Kelly; Scott Watson

doi:10.3390/electronics11091430

journal article Open Access Apr 29, 2022

GaN Laser Diode Technology for Visible-Light Communications

Stephen P. Najda Piotr Perlin Tadek Suski Lucja Marona Mike Leszczyński Przemek Wisniewski Szymon Stanczyk Dario Schiavon Thomas Slight Malcolm A. Watson Steffan Gwyn Anthony E. Kelly Scott Watson

Electronics Vol. 11 No. 9 pp. 1430 · MDPI AG

View at Publisher Save 10.3390/electronics11091430

Abstract

Gallium nitride (GaN) laser diodes (LDs) are considered for visible light communications (VLC) in free space, underwater, and in plastic optical fibers (POFs). A review of recent results is presented, showing high-frequency operation of AlGaInN laser diodes with data transmission rates up to 2.5 Gbit/s in free space and underwater and high bandwidths of up to 1.38 GHz through 10 m of plastic optical fiber. Distributed feedback (DFB) GaN LDs are fabricated to achieve single-frequency operation. We report on single-wavelength emissions of GaN DFB LDs with a side-mode suppression ratio (SMSR) in excess of 35 dB.

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Metrics

40

Citations

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References

Details

Published: Apr 29, 2022
Vol/Issue: 11(9)
Pages: 1430
License: View

Authors

S

Stephen P. Najda

TopGaN Ltd., Aleja Prymasa Tysiąclecia 98, 01-424 Warsaw, Poland

P

Piotr Perlin

TopGaN Ltd., Aleja Prymasa Tysiąclecia 98, 01-424 Warsaw, Poland; Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland

T

Tadek Suski

Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland

L

Lucja Marona

TopGaN Ltd., Aleja Prymasa Tysiąclecia 98, 01-424 Warsaw, Poland; Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland

M

Mike Leszczyński

TopGaN Ltd., Aleja Prymasa Tysiąclecia 98, 01-424 Warsaw, Poland; Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland

P

Przemek Wisniewski

TopGaN Ltd., Aleja Prymasa Tysiąclecia 98, 01-424 Warsaw, Poland; Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland

S

Szymon Stanczyk

Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland

D

Dario Schiavon

TopGaN Ltd., Aleja Prymasa Tysiąclecia 98, 01-424 Warsaw, Poland

T

Thomas Slight

Sivers Photonics Ltd., 4 Stanley Boulevard, Hamilton International Technology Park, Blantyre, Glasgow G72 0BN, UK

M

Malcolm A. Watson

BAE Systems Advanced Technology Centre, FPC 267, Filton, Bristol BS34 7QW, UK

S

Steffan Gwyn

James Watt School of Engineering, University of Glasgow, Glasgow G12 8LT, UK

A

Anthony E. Kelly

James Watt School of Engineering, University of Glasgow, Glasgow G12 8LT, UK

S

Scott Watson

James Watt School of Engineering, University of Glasgow, Glasgow G12 8LT, UK

Cite This Article

Stephen P. Najda, Piotr Perlin, Tadek Suski, et al. (2022). GaN Laser Diode Technology for Visible-Light Communications. Electronics, 11(9), 1430. https://doi.org/10.3390/electronics11091430

GaN Laser Diode Technology for Visible-Light Communications

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