Design and Implementation of High-Capacity DDR3 Micro-Module Based on 3D TSV Advanced Packaging

Haoyue Ji; Liang Zeng; Hongwen Qian; Wenchao Tian; Jingjing Lin; Yuhe Duan

doi:10.3390/mi17040459

journal article Open Access Apr 09, 2026

Design and Implementation of High-Capacity DDR3 Micro-Module Based on 3D TSV Advanced Packaging

Haoyue Ji Liang Zeng

Hongwen Qian Wenchao Tian Jingjing Lin

Yuhe Duan

Micromachines Vol. 17 No. 4 pp. 459 · MDPI AG

View at Publisher Save 10.3390/mi17040459

Abstract

To meet the demands for miniaturization, lightweight design, and high performance in modern electronic systems, advanced 3D TSV technology enables a substantial increase in storage capacity even within physically constrained form factors. This paper proposes a schematic design methodology and system-level integrated modeling approach for a four-layer stacked micro-module based on wafer-level packaging. By leveraging heterogeneous chip fan-out technology and TSV-based vertical stacking, the fabricated DDR3 micro-module achieves a compact footprint of 14 × 9 × 3.5 mm, a storage capacity of 4 GB, and a 64-bit bus width. Compared to conventional board-level mounting, the module reduces the footprint area by 95%. Following comprehensive multi-level testing, the micro-module fully complies with standard protocol requirements, enabling a paradigm shift in form factors for mobile computing devices while enhancing computational density and energy efficiency in data center server applications.

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Details

Published: Apr 09, 2026
Vol/Issue: 17(4)
Pages: 459
License: View

Authors

H

Haoyue Ji

School of Electro-Mechnical Engineering, Xidian University, Xi’an 710071, China; The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214062, China

L

Liang Zeng

The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214062, China

H

Hongwen Qian

The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214062, China

W

Wenchao Tian

School of Electro-Mechnical Engineering, Xidian University, Xi’an 710071, China

J

Jingjing Lin

The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214062, China

Y

Yuhe Duan

The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214062, China

Cite This Article

Haoyue Ji, Liang Zeng, Hongwen Qian, et al. (2026). Design and Implementation of High-Capacity DDR3 Micro-Module Based on 3D TSV Advanced Packaging. Micromachines, 17(4), 459. https://doi.org/10.3390/mi17040459

Design and Implementation of High-Capacity DDR3 Micro-Module Based on 3D TSV Advanced Packaging

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