Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires

Carlo Cagli; Federico Nardi; Bruce Harteneck; Zhongkui Tan; Yuegang Zhang; Daniele Ielmini

doi:10.1002/smll.201101157

journal article Aug 23, 2011

Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires

Carlo Cagli Federico Nardi Bruce Harteneck Zhongkui Tan Yuegang Zhang

Daniele Ielmini

Small Vol. 7 No. 20 pp. 2899-2905 · Wiley

View at Publisher Save 10.1002/smll.201101157

Abstract

AbstractResistive‐switching memory (RRAM) is an emerging nanoscale device based on the localized metal–insulator transition within a few‐nanometer‐sized metal oxide region. RRAM is one of the most promising memory technologies for the ultimate downscaling of nonvolatile memory. However, to develop memory arrays with densities approaching 1 Tb cm−2, bottom‐up schemes based on synthesis and assembly of metal oxide nanowires (NWs) must be demonstrated. A RRAM memory device based on core–shell Ni‐NiO NWs is presented, in which the Ni core plays the role of the metallic interconnect, while the NiO shell serves as the active switching layer. A resistance change of at least two orders of magnitude is shown on electrical operation of the device, and the metal–insulator switching is unequivocally demonstrated to take place in the NiO shell at the crossing between two NWs or between a NW and a gold electrode strip. Since the fabrication of the NW crossbar device is not limited by lithography, this approach may provide a basis for high‐density, low‐cost crossbar memory with long‐term storage stability.

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Metrics

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Citations

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References

Details

Published: Aug 23, 2011
Vol/Issue: 7(20)
Pages: 2899-2905
License: View

Authors

E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720

Cite This Article

Carlo Cagli, Federico Nardi, Bruce Harteneck, et al. (2011). Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires. Small, 7(20), 2899-2905. https://doi.org/10.1002/smll.201101157

Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires

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