AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization

Ananya Banik; Kanishka Biswas

doi:10.1016/j.jssc.2016.02.012

journal article Oct 01, 2016

AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization

Ananya Banik Kanishka Biswas

Journal of Solid State Chemistry Vol. 242 pp. 43-49 · Elsevier BV

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Citations

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References

Details

Published: Oct 01, 2016
Vol/Issue: 242
Pages: 43-49
License: View

Authors

Funding

Science and Engineering Research Board

Sheikh Saqr Laboratory

Cite This Article

Ananya Banik, Kanishka Biswas (2016). AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization. Journal of Solid State Chemistry, 242, 43-49. https://doi.org/10.1016/j.jssc.2016.02.012

AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization

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