The origin of low thermal conductivity in Sn1−xSbxTe: phonon scattering via layered intergrowth nanostructures

Ananya Banik; Badri Vishal; Suresh Perumal; Ranjan Datta; Kanishka Biswas

doi:10.1039/c6ee00728g

journal article Jan 01, 2016

The origin of low thermal conductivity in Sn1−xSbxTe: phonon scattering via layered intergrowth nanostructures

Ananya Banik Badri Vishal Suresh Perumal

Ranjan Datta

Kanishka Biswas

Energy Environ. Sci. Vol. 9 No. 6 pp. 2011-2019 · Royal Society of Chemistry (RSC)

View at Publisher Save 10.1039/c6ee00728g

Abstract

The spontaneous formation of nanodomains of the Sb-rich layered intergrowth SnmSb2nTe3n+m compounds in a SnTe matrix resulted in ultralow lattice thermal conductivity.

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Metrics

287

Citations

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References

Details

Published: Jan 01, 2016
Vol/Issue: 9(6)
Pages: 2011-2019

Authors

A

Ananya Banik

New Chemistry Unit; Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR); Bangalore 560064; India

B

Badri Vishal

Chemistry and Physics of Materials Unit; Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR); Bangalore 560064; India; International Centre for Materials Science

S

Suresh Perumal

New Chemistry Unit; Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR); Bangalore 560064; India

R

Ranjan Datta

Chemistry and Physics of Materials Unit; Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR); Bangalore 560064; India; International Centre for Materials Science

K

Kanishka Biswas

New Chemistry Unit; Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR); Bangalore 560064; India

Cite This Article

Ananya Banik, Badri Vishal, Suresh Perumal, et al. (2016). The origin of low thermal conductivity in Sn1−xSbxTe: phonon scattering via layered intergrowth nanostructures. Energy Environ. Sci., 9(6), 2011-2019. https://doi.org/10.1039/c6ee00728g

The origin of low thermal conductivity in Sn1−xSbxTe: phonon scattering via layered intergrowth nanostructures

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