Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function

L.P.B. Lima; J.A. Diniz; I. Doi; J. Godoy Fo

doi:10.1016/j.mee.2011.04.059

journal article Apr 01, 2012

Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function

L.P.B. Lima J.A. Diniz

I. Doi J. Godoy Fo

Microelectronic Engineering Vol. 92 pp. 86-90 · Elsevier BV

View at Publisher Save 10.1016/j.mee.2011.04.059

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Published: Apr 01, 2012
Vol/Issue: 92
Pages: 86-90
License: View

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Cite This Article

L.P.B. Lima, J.A. Diniz, I. Doi, et al. (2012). Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function. Microelectronic Engineering, 92, 86-90. https://doi.org/10.1016/j.mee.2011.04.059

Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function

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