Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity, and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE)

Xueying Zhao; Ching-Ping Wong

doi:10.1021/am504046b

journal article Sep 19, 2014

Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity, and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE)

Xueying Zhao

Ching-Ping Wong

ACS Applied Materials & Interfaces Vol. 6 No. 19 pp. 16782-16791 · American Chemical Society (ACS)

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References

Details

Published: Sep 19, 2014
Vol/Issue: 6(19)
Pages: 16782-16791

Authors

X

Xueying Zhao

School of Materials Science and Engineering, Georgia Institute of Technology. 771 Ferst Drive, Atlanta, Georgia 30332, United States

C

Ching-Ping Wong

School of Materials Science and Engineering, Georgia Institute of Technology. 771 Ferst Drive, Atlanta, Georgia 30332, United States; Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong

Cite This Article

Xueying Zhao, Ching-Ping Wong (2014). Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity, and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE). ACS Applied Materials & Interfaces, 6(19), 16782-16791. https://doi.org/10.1021/am504046b

Deep Etching of Single- and Polycrystalline Silicon with High Speed, High Aspect Ratio, High Uniformity, and 3D Complexity by Electric Bias-Attenuated Metal-Assisted Chemical Etching (EMaCE)

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