Electrochemical Impedance of Well-Passivated Semiconductors Reveals Bandgaps, Fermi Levels, and Interfacial Density of States

Claire D. Hallock; Michael J. Rose

doi:10.1021/jacs.4c02738

journal article Jul 08, 2024

Electrochemical Impedance of Well-Passivated Semiconductors Reveals Bandgaps, Fermi Levels, and Interfacial Density of States

Claire D. Hallock

Michael J. Rose

Journal of the American Chemical Society Vol. 146 No. 28 pp. 18989-18998 · American Chemical Society (ACS)

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Details

Published: Jul 08, 2024
Vol/Issue: 146(28)
Pages: 18989-18998
License: View

Authors

C

Claire D. Hallock

Department of Chemistry, University of Texas Austin, Austin, Texas 78712, United States

M

Michael J. Rose

Department of Chemistry, University of Texas Austin, Austin, Texas 78712, United States

Funding

Welch Foundation Award: F-1822

Basic Energy Sciences Award: DE-SC0023283

Cite This Article

Claire D. Hallock, Michael J. Rose (2024). Electrochemical Impedance of Well-Passivated Semiconductors Reveals Bandgaps, Fermi Levels, and Interfacial Density of States. Journal of the American Chemical Society, 146(28), 18989-18998. https://doi.org/10.1021/jacs.4c02738

Electrochemical Impedance of Well-Passivated Semiconductors Reveals Bandgaps, Fermi Levels, and Interfacial Density of States

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