journal article Feb 08, 1988

Quantum capacitance devices

Applied Physics Letters Vol. 52 No. 6 pp. 501-503 · AIP Publishing

View at Publisher Save 10.1063/1.99649

Abstract

Two-dimensional electron gas (2DEG) in a quantum well or inversion layer, unlike an ordinary grounded metallic plane, does not completely screen an applied transverse electric field. Owing to its Fermi degeneracy energy, a 2DEG manifests itself as a capacitor in series, whose capacitance per unit area equals CQ=me2/πℏ2, where m is the effective electron mass in the direction transverse to the quantum well. Partial penetration of an external field through a highly conducting 2DEG allows the implementation of several novel high-speed devices, including a three-terminal resonant-tunneling transistor and a gate-controlled thermionic emission transistor.

Topics

No keywords indexed for this article. Browse by subject →

References

14

[1]

Electronic properties of two-dimensional systems

Tsuneya Ando, Alan B. Fowler, Frank Stern

Reviews of Modern Physics 1982 10.1103/revmodphys.54.437

[2]

[3]

J. Vac. Sci. Technol. (1974) 10.1116/1.1318714

[4]

J. Appl. Phys. (1975) 10.1063/1.321863

[5]

Surf. Sci. (1976) 10.1016/0039-6028(76)90113-8

[6]

[7]

[8]

[9]

[10]

[11]

Appl. Phys. Lett. (1985) 10.1063/1.95966

[12]

Appl. Phys. Lett. (1986) 10.1063/1.97355

[13]

Appl. Phys. Lett. (1985) 10.1063/1.96276

[14]

Appl. Phys. Lett. (1986)

Cited By

811

Study of energy storage properties of Ti2N electrode materials and interface regulation with ionic liquid for supercapacitors

Guangmin Yang, Jiahui Yu · 2026

Journal of Energy Storage

First-principle study of electronic properties, carrier mobility and quantum capacitance of M-doped Sc2CO2 (M=Ag, Au, Cu, Pd, Pt, Rh) MXenes for supercapacitor electrodes

Xu-Ge Ma, Xiao-Hong Li · 2025

Journal of Energy Storage

Modulated strain-induced boron pnictides (BX, X=N, P, As and Sb) monolayer for supercapacitor applications

Himalay Kolavada, Pradeepsinh Jadeja · 2025

International Journal of Modern Phy...

Tuning properties of binary functionalization of Sc2C MXenes for supercapacitor electrodes

Himalay Kolavada, Rishit S. Shukla · 2025

Journal of Power Sources

Triple and quadruple metal gate work function engineering to improve the performance of junctionless double surrounding gate In0.53Ga0.47As nanotube MOSFET for the upcoming Sub 3 nm technology node

Sanjay, Vibhor Kumar · 2024

Physics Letters A

Quantum capacitance behavior of Ti2CO2/MoS2 heterostructures with 3d and 4d transition-metal doping

Qingxiao Zhou, Li Wang · 2024

Journal of Energy Storage

Optimizing the quantum capacitance of AsXBr/AsYBr ((X ≠ Y) = S, Se and Te) Janus heterostructures for high-performance supercapacitors

Himalay Kolavada, Gaushiya A. Shaikh · 2024

Materials Chemistry Frontiers

From medium- to high-entropy hydroxides for hybrid supercapacitors: a review

Rasmus Palm, Angélica María Baena-Moncada · 2024

Journal of Materials Chemistry A

Electrochemical Impedance of Well-Passivated Semiconductors Reveals Bandgaps, Fermi Levels, and Interfacial Density of States

Claire D. Hallock, Michael J. Rose · 2024

Journal of the American Chemical So...

The future transistors

Wei Cao, Huiming Bu · 2023

Nature

Theoretical Studies on the Quantum Capacitance of Two-Dimensional Electrode Materials for Supercapacitors

Jianyan Lin, Yuan Yuan · 2023

Nanomaterials

Design principle of MoS2/C heterostructure to enhance the quantum capacitance for supercapacitor application

Samadhan Kapse, Bennet Benny · 2021

Journal of Energy Storage

Effect of uniaxial strain on electrical properties of CNT-based junctionless field-effect transistor: Numerical study

Parisa Pourian, Reza Yousefi · 2016

Superlattices and Microstructures

Preparation and characterization of semiconductor GNR-CNT nanocomposite and its application in FET

Sedighe Salimian, Mohammad Esmaeil Azim Araghi · 2016

Journal of Physics and Chemistry of...

Analysis of different parameters of channel material and temperature on threshold voltage of CNTFET

Sanjeet Kumar Sinha, Saurabh Chaudhury · 2015

Materials Science in Semiconductor...

Capacitance of carbon-based electrical double-layer capacitors

Hengxing Ji, Xin Zhao · 2014

Nature Communications

Relative contributions of quantum and double layer capacitance to the supercapacitor performance of carbon nanotubes in an ionic liquid

Alexander J. Pak, Eunsu Paek · 2013

Physical Chemistry Chemical Physics

Graphene p–n–p junctions controlled by local gates made of naturally oxidized thin aluminium films

Youngwoo Nam, Niclas Lindvall · 2012

Carbon

Measurement of the quantum capacitance of interacting electrons in carbon nanotubes

S. Ilani, L. A. K. Donev · 2006

Nature Physics

Metrics

811

Citations

14

References

Details

Published: Feb 08, 1988
Vol/Issue: 52(6)
Pages: 501-503

Authors

AT&T Bell Laboratories, Murray Hill, New Jersey 07974

Cite This Article

Serge Luryi (1988). Quantum capacitance devices. Applied Physics Letters, 52(6), 501-503. https://doi.org/10.1063/1.99649

Related

You May Also Like

Organic electroluminescent diodes

C. W. Tang, S. A. VanSlyke · 1987

13,198 citations

VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

R. S. Wagner, W. C. Ellis · 1964

6,254 citations

Two-layer organic photovoltaic cell

C. W. Tang · 1986

4,426 citations

Anomalously increased effective thermal conductivities of ethylene glycol-based nanofluids containing copper nanoparticles

J. A. Eastman, S. U.-S. Choi · 2001

3,422 citations

10.1162/jmlr.2003.3.4-5.993

· 2000

2,845 citations