High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

Th. Gessmann; E. F. Schubert

doi:10.1063/1.1643786

journal article Mar 01, 2004

High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

Th. Gessmann E. F. Schubert

Journal of Applied Physics Vol. 95 No. 5 pp. 2203-2216 · AIP Publishing

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Abstract

AlGaInP lattice matched to GaAs is suited for light-emitting diodes (LEDs) operating in the red, orange, yellow, and yellow–green wavelength range. Such long-wavelength visible-spectrum devices will play an important role in solid-state lighting applications. This review discusses the major classes of AlGaInP device structures, including absorbing-substrate (AS) LEDs, absorbing substrate LEDs enhanced by distributed-Bragg-reflectors (DBRs), transparent substrate (TS) LEDs, thin-film (TF) LEDs, and LEDs using omnidirectional reflectors (ODRs). Some of these device structures have well-known deficiencies: A significant fraction of light is absorbed in the GaAs substrate in AS-LEDs; DBRs are essentially transparent at oblique angles of incidence leading to substantial optical losses. More recent developments such as TS-LEDs and TF-LEDs avoid these drawbacks. High-reflectivity, electrically conductive ODRs were recently developed that considerably outperform conventional distributed Bragg reflectors. LEDs using such conductive ODRs can replace DBRs in AlGaInP LEDs and are potential candidates for low-cost high-efficiency LEDs suitable for high-power solid-state lighting applications.

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Details

Published: Mar 01, 2004
Vol/Issue: 95(5)
Pages: 2203-2216

Authors

T

Th. Gessmann

Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180

E

E. F. Schubert

Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180

Cite This Article

Th. Gessmann, E. F. Schubert (2004). High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications. Journal of Applied Physics, 95(5), 2203-2216. https://doi.org/10.1063/1.1643786

High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

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