On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

B. Hoex; J. J. H. Gielis; M. C. M. van de Sanden; W. M. M. Kessels

doi:10.1063/1.3021091

journal article Dec 01, 2008

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

B. Hoex J. J. H. Gielis M. C. M. van de Sanden W. M. M. Kessels

Journal of Applied Physics Vol. 104 No. 11 · AIP Publishing

View at Publisher Save 10.1063/1.3021091

Abstract

Al 2 O 3 is a versatile high-κ dielectric that has excellent surface passivation properties on crystalline Si (c-Si), which are of vital importance for devices such as light emitting diodes and high-efficiency solar cells. We demonstrate both experimentally and by simulations that the surface passivation can be related to a satisfactory low interface defect density in combination with a strong field-effect passivation induced by a negative fixed charge density Qf of up to 1013 cm−2 present in the Al2O3 film at the interface with the underlying Si substrate. The negative polarity of Qf in Al2O3 is especially beneficial for the passivation of p-type c-Si as the bulk minority carriers are shielded from the c-Si surface. As the level of field-effect passivation is shown to scale with Qf2, the high Qf in Al2O3 tolerates a higher interface defect density on c-Si compared to alternative surface passivation schemes.

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Details

Published: Dec 01, 2008
Vol/Issue: 104(11)

Authors

B

B. Hoex

Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands

J

J. J. H. Gielis

Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands

M

M. C. M. van de Sanden

Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands

W

W. M. M. Kessels

Eindhoven University of Technology Department of Applied Physics, , P.O. Box 513, 5600 MB Eindhoven, The Netherlands

Cite This Article

B. Hoex, J. J. H. Gielis, M. C. M. van de Sanden, et al. (2008). On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3. Journal of Applied Physics, 104(11). https://doi.org/10.1063/1.3021091

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

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