Electrical compensation in semi-insulating GaAs

R. Zucca

doi:10.1063/1.323906

journal article May 01, 1977

Electrical compensation in semi-insulating GaAs

R. Zucca

Journal of Applied Physics Vol. 48 No. 5 pp. 1987-1994 · AIP Publishing

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Abstract

Identification of the deep levels responsible for the electrical compensation of Cr-doped semi-insulating GaAs has been lacking in spite of the increasing importance of this material. Transport measurements on bulk-grown semi-insulating GaAs single crystals with three different Cr concentrations are presented to shed light on this problem. Alternative models for the electrical compensation are discussed. A detailed analysis of the temperature dependence of the resistivity shows that the ’’conventional’’ model in which deep Cr acceptors compensate residual shallow donors is incorrect. A more elaborate model which includes both a deep acceptor and a deep donor is proposed to properly interpret the experimental data. The deep donor level, located between 0.64 and 0.72 eV from the conduction band, is assigned to oxygen.

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Citations

49

References

Details

Published: May 01, 1977
Vol/Issue: 48(5)
Pages: 1987-1994

Authors

R

R. Zucca

Rockwell International/Science Center, Thousand Oaks, California 91360

Cite This Article

R. Zucca (1977). Electrical compensation in semi-insulating GaAs. Journal of Applied Physics, 48(5), 1987-1994. https://doi.org/10.1063/1.323906

Electrical compensation in semi-insulating GaAs

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