Steric origin of the silicon-oxygen-silicon angle distribution in silica

Y. T. Thathachari; W. A. Tiller

doi:10.1063/1.330458

journal article Dec 01, 1982

Steric origin of the silicon-oxygen-silicon angle distribution in silica

Y. T. Thathachari W. A. Tiller

Journal of Applied Physics Vol. 53 No. 12 pp. 8615-8619 · AIP Publishing

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Abstract

The oxygen-oxygen separation distance between adjacent tetrahedra in silica has been considered as a restrictive criterion for the formation of accepted structures. The single stipulation of a minimum O-O separation of say 2.9 Å leads to a distribution of the Si-O-Si angle with a maximum at about 145° and cutoffs near 120° on the low end and 180° on the high end of the scale, all in excellent agreement with the experimental observations for silica. No detailed energetic considerations are involved.

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Metrics

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Citations

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References

Details

Published: Dec 01, 1982
Vol/Issue: 53(12)
Pages: 8615-8619

Authors

Y

Y. T. Thathachari

Department of Materials Science and Engineering, Stanford University, Stanford, California, 94305

W

W. A. Tiller

Department of Materials Science and Engineering, Stanford University, Stanford, California, 94305

Cite This Article

Y. T. Thathachari, W. A. Tiller (1982). Steric origin of the silicon-oxygen-silicon angle distribution in silica. Journal of Applied Physics, 53(12), 8615-8619. https://doi.org/10.1063/1.330458

Steric origin of the silicon-oxygen-silicon angle distribution in silica

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