A new doping method using metalorganics in chemical vapor deposition of 6H–SiC

S. Yoshida; E. Sakuma; S. Misawa; S. Gonda

doi:10.1063/1.332859

journal article Jan 01, 1984

A new doping method using metalorganics in chemical vapor deposition of 6H–SiC

S. Yoshida E. Sakuma S. Misawa S. Gonda

Journal of Applied Physics Vol. 55 No. 1 pp. 169-171 · AIP Publishing

View at Publisher Save 10.1063/1.332859

Abstract

Aluminum doping was performed using triethylaluminum as the dopant in chemical vapor deposition of 6H–silicon carbide (SiC). Measurements on the electrical and cathodoluminescent properties of the epilayers indicate that the doping concentration of aluminum can be easily controlled by the flow rate of metalorganics. Electroluminescence was also observed for the pn junctions prepared by the successive growth of a nondoped n layer and a p layer doped with aluminum using metalorganics.

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Metrics

15

Citations

12

References

Details

Published: Jan 01, 1984
Vol/Issue: 55(1)
Pages: 169-171

Authors

S

S. Yoshida

Electrotechnical Laboratory, Sakura-Mura, Ibaraki, 305, Japan

E

E. Sakuma

Electrotechnical Laboratory, Sakura-Mura, Ibaraki, 305, Japan

S

S. Misawa

Electrotechnical Laboratory, Sakura-Mura, Ibaraki, 305, Japan

S

S. Gonda

Electrotechnical Laboratory, Sakura-Mura, Ibaraki, 305, Japan

Cite This Article

S. Yoshida, E. Sakuma, S. Misawa, et al. (1984). A new doping method using metalorganics in chemical vapor deposition of 6H–SiC. Journal of Applied Physics, 55(1), 169-171. https://doi.org/10.1063/1.332859

A new doping method using metalorganics in chemical vapor deposition of 6H–SiC

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