The hot-electron problem in small semiconductor devices

W. Hänsch; M. Miura-Mattausch

doi:10.1063/1.337408

journal article Jul 15, 1986

The hot-electron problem in small semiconductor devices

W. Hänsch M. Miura-Mattausch

Journal of Applied Physics Vol. 60 No. 2 pp. 650-656 · AIP Publishing

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Abstract

Decreasing device dimensions will cause an increasing internal field strength in a semiconductor device. The average carrier energy is different from the thermal equilibrium value 3/2 kT. Modification of current transport is considered on different levels of approximation. In a local approximation we derive a field-dependent carrier mobility and temperature from a more general self-consistent formulation. Numerical estimation of hot-electron effects are given for a realistic n-channel metal-oxide-semiconductor field-effect transistor of various channel lengths. It is shown that both high-field and field-gradient effects will contribute.

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Citations

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References

Details

Published: Jul 15, 1986
Vol/Issue: 60(2)
Pages: 650-656

Authors

W

W. Hänsch

Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 München 83, Federal Republic of Germany

M

M. Miura-Mattausch

Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 München 83, Federal Republic of Germany

Cite This Article

W. Hänsch, M. Miura-Mattausch (1986). The hot-electron problem in small semiconductor devices. Journal of Applied Physics, 60(2), 650-656. https://doi.org/10.1063/1.337408

The hot-electron problem in small semiconductor devices

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