Optical constants and electrical transport parameters of HfSi2

A. Borghesi; F. Marabelli; G. Guizzetti; M. Michelini; F. Nava

doi:10.1063/1.347535

journal article Jun 01, 1991

Optical constants and electrical transport parameters of HfSi2

A. Borghesi F. Marabelli G. Guizzetti M. Michelini F. Nava

Journal of Applied Physics Vol. 69 No. 11 pp. 7645-7650 · AIP Publishing

View at Publisher Save 10.1063/1.347535

Abstract

HfSi2 polycrystalline thin films, grown by coevaporation of Hf and Si and subsequently annealed at 850 °C, were studied by electrical resistivity measurements (from 10 to 900 K), Hall voltage (from 10 to 300 K), and optical reflectance (at room temperature) from 5 meV to 12 eV. Composition and structure of the films were investigated by Rutherford backscattering spectroscopy and x-ray diffraction. HfSi2 is metallic with (i) a high residual resistivity, (ii) a phonon contribution to the resistivity showing a negative deviation from linearity, and (iii) low-energy interband transitions. Transport measurements yielded a Debye temperature of 430 K, a free-carrier concentration of ∼4×1021 cm−3, and a mean free path of 139 Å. The reflectivity was Kramers–Kronig transformed to obtain the dielectric functions which, at low energies, are discussed in term of the Drude model. The optical parameters agree quite well with transport results, thus permitting one to obtain a reasonable value for the Fermi velocity.

Topics

No keywords indexed for this article. Browse by subject →

References

31

[1]

J. Vac. Sci. Technol. B (1984)

[2]

Mater. Sci. Eng. A (1988)

[3]

Khim Promst. (Moscow) (1989)

[4]

React. Kinet Catal. Lett. (1988) 10.1007/bf02071162

[5]

[6]

J. Electrochem. Soc. (1982) 10.1149/1.2123815

[7]

[8]

J. Vac. Sci. Technol. A (1985) 10.1116/1.572909

[9]

J. Appl. Phys. (1973) 10.1063/1.1662861

[10]

J. Appl. Phys. (1987) 10.1063/1.337955

[11]

J. Vac. Sci. Technol. B (1984)

[12]

Appl. Phys. Lett. (1980) 10.1063/1.92005

[13]

J. Appl. Phys. (1988) 10.1063/1.340168

[14]

J. Phys. Condens. Matter (1989) 10.1088/0953-8984/1/46/006

[15]

Mater. Lett. (1983) 10.1016/0167-577x(83)90026-5

[16]

J. Appl. Phys. (1990) 10.1063/1.345351

[17]

[18]

J. Appl. Phys. (1987) 10.1063/1.338203

[19]

Appl. Phys. Lett. (1987) 10.1063/1.98453

[20]

Appl. Phys. Lett. (1987) 10.1063/1.98753

[21]

Appl. Phys. Lett. (1984) 10.1063/1.94932

[22]

J. Vac. Sci. Technol. B (1985) 10.1116/1.583113

[23]

J. Mater. Res. (1986) 10.1557/jmr.1986.0327

[24]

Phys. Rev. B (1981) 10.1103/physrevb.24.7404

[25]

Phys. Rev. B (1986) 10.1103/physrevb.34.6143

[26]

Phys. Rev. B (1982) 10.1103/physrevb.25.179

[27]

Phys. Rev. Lett. (1977) 10.1103/physrevlett.38.782

[28]

J. Appl. Phys. (1989) 10.1063/1.342949

[29]

Phys. Rev. B (1981) 10.1103/physrevb.23.5080

[30]

Phys. Rev. B (1978) 10.1103/physrevb.17.3725

[31]

Phys. Rev. B (1989) 10.1103/physrevb.39.7754

Metrics

11

Citations

31

References

Details

Published: Jun 01, 1991
Vol/Issue: 69(11)
Pages: 7645-7650

Authors

A

A. Borghesi

Dipartimento di Fisica ‘‘A. Volta,’’ Università degli Studi di Pavia, Via Bassi 6, I-27100 Pavia, Italy

F

F. Marabelli

Dipartimento di Fisica ‘‘A. Volta,’’ Università degli Studi di Pavia, Via Bassi 6, I-27100 Pavia, Italy

G

G. Guizzetti

Dipartimento di Fisica, Università degli Studi di Modena, Via Campi 210/A, I-41100 Modena, Italy

M

M. Michelini

Dipartimento di Fisica, Università degli Studi di Modena, Via Campi 210/A, I-41100 Modena, Italy

F

F. Nava

Dipartimento di Fisica, Università degli Studi di Modena, Via Campi 210/A, I-41100 Modena, Italy

Cite This Article

A. Borghesi, F. Marabelli, G. Guizzetti, et al. (1991). Optical constants and electrical transport parameters of HfSi2. Journal of Applied Physics, 69(11), 7645-7650. https://doi.org/10.1063/1.347535

Optical constants and electrical transport parameters of HfSi2

You May Also Like