Determination of the lattice contraction of boron-doped silicon

H. Holloway; S. L. McCarthy

doi:10.1063/1.353886

journal article Jan 01, 1993

Determination of the lattice contraction of boron-doped silicon

H. Holloway S. L. McCarthy

Journal of Applied Physics Vol. 73 No. 1 pp. 103-111 · AIP Publishing

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Abstract

We report a study of the change in lattice constant when single-crystal silicon is substitutionally doped with boron. The measurements were made using 10-μm-thick epilayers with boron concentrations (NB) in the range 1.7×1019–1.2×1020 cm−3. The influence of elastic strain in the epilayers and their substrates was eliminated by including Bragg reflections from planes that were inclined to the (100) surface. We obtained a value for the lattice contraction coefficient β=(5.19±0.09)×10−24 cm3, where the range is ± one standard error. Specimens with NB≊2×1019 cm−3 were strained to give coherent interfaces with their substrates. Evidence for relaxation (presumably by misfit dislocations at the interface) was observed with NB≊5×1019 cm−3 (corresponding to a lattice mismatch of approximately 2.5×10−4), but this occurred in a patchy fashion and remained incomplete while NB was increased to 1.2×1020 cm−3 (corresponding to a mismatch of 6.5×10−4). This partial relaxation occurred at somewhat smaller mismatches than would be expected from reported studies of silicon-germanium alloy epilayers on silicon substrates. Our technique for analyzing a set of Bragg reflections to separate the effects of elastic strain and lattice mismatch appears to be novel and has general applicability to the study of epilayer/substrate combinations.

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References

Details

Published: Jan 01, 1993
Vol/Issue: 73(1)
Pages: 103-111

Authors

H

H. Holloway

Ford Research Laboratory, SRL/MD3439, P. O. Box 2053, Dearborn, Michigan 48121-2053

S

S. L. McCarthy

Ford Research Laboratory, SRL/MD3439, P. O. Box 2053, Dearborn, Michigan 48121-2053

Cite This Article

H. Holloway, S. L. McCarthy (1993). Determination of the lattice contraction of boron-doped silicon. Journal of Applied Physics, 73(1), 103-111. https://doi.org/10.1063/1.353886

Determination of the lattice contraction of boron-doped silicon

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