GaAs to InP wafer fusion

R. J. Ram; J. J. Dudley; J. E. Bowers; L. Yang; K. Carey; S. J. Rosner; K. Nauka

doi:10.1063/1.359884

journal article Sep 15, 1995

GaAs to InP wafer fusion

R. J. Ram J. J. Dudley J. E. Bowers L. Yang

K. Carey S. J. Rosner K. Nauka

Journal of Applied Physics Vol. 78 No. 6 pp. 4227-4237 · AIP Publishing

View at Publisher Save 10.1063/1.359884

Abstract

This paper presents an analysis of the various properties of the fused interface between GaAs and InP. Interface dislocations are characterized by transmission electron microscopy. Bipolar electrical properties are studied by electron beam induced current measurements and by electrical measurements of fused diode and laser structures. Absorptive optical losses at the interface are estimated from measurements on fused Fabry–Perot resonators and optical scattering losses from interface roughness are estimated by atomic force microscopy. Finally a preliminary mechanical analysis of fracture patterns of fused mesas is presented. The results from our analysis are used to develop guidelines for the fabrication of fused optoelectronic devices.

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Citations

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References

Details

Published: Sep 15, 1995
Vol/Issue: 78(6)
Pages: 4227-4237

Authors

R

R. J. Ram

Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560

J

J. J. Dudley

Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560

J

J. E. Bowers

Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560

L

L. Yang

Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, California 94303-0867

K

K. Carey

Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, California 94303-0867

S

S. J. Rosner

Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, California 94303-0867

K

K. Nauka

Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, California 94303-0867

Cite This Article

R. J. Ram, J. J. Dudley, J. E. Bowers, et al. (1995). GaAs to InP wafer fusion. Journal of Applied Physics, 78(6), 4227-4237. https://doi.org/10.1063/1.359884

GaAs to InP wafer fusion

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