Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses

Y. T. Dai; J. C. Fan; Yaojing Chen; R. M. Lin; Sun-Mi Lee; Hung-Wei Lin

doi:10.1063/1.366255

journal article Nov 01, 1997

Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses

Y. T. Dai J. C. Fan Yaojing Chen R. M. Lin Sun-Mi Lee

Hung-Wei Lin

Journal of Applied Physics Vol. 82 No. 9 pp. 4489-4492 · AIP Publishing

View at Publisher Save 10.1063/1.366255

Abstract

In this report, we investigate the thermal relaxation of the photoluminescence (PL) in InAs/GaAs quantum dot superlattices with large thicknesses that have two to more than three times the critical thickness for spontaneous island formation. It is found that the linewidth first decreases and then increases with increasing temperature. In addition to thermionic emission, we suggest that carrier repopulation among quantum dots plays an important role in the PL quenching. The temperature dependence of PL peak energy following a Varshni relation was attributed to the dilation of lattice and electron-lattice interaction. The emission intensity quenches rapidly when the temperature rises to around 60 K, indicating the existence of defect-related centers in the vicinity of InAs/GaAs interfaces. In addition, we performed the measurement of the activation energy of PL quenching at different emission energy. We found that the loss mechanism of PL quenching based on the activation of electron-hole pairs from quantum dots to the adjacent barriers was difficult to explain the behavior in quantum dots with large thicknesses. In this case, we suggest that the PL quenching is dominated by the recombination through interface defects.

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References

18

[1]

Phys. Status Solidi B (1996) 10.1002/pssb.2221940116

[2]

Appl. Phys. Lett. (1982) 10.1063/1.92959

[3]

Appl. Phys. Lett. (1996) 10.1063/1.117375

[4]

Science (1995) 10.1126/science.267.5206.1966

[5]

Appl. Phys. Lett. (1994) 10.1063/1.111434

[6]

Phys. Rev. B (1995)

[7]

Jpn. J. Appl. Phys. (1996) 10.1143/jjap.35.1320

[8]

Appl. Phys. Lett. (1994) 10.1063/1.111502

[9]

[10]

Appl. Phys. Lett. (1996) 10.1063/1.116461

[11]

Phys. Rev. B (1991) 10.1103/physrevb.43.9312

[12]

Phys. Rev. B (1996)

[13]

J. Vac. Sci. Technol. B (1994) 10.1116/1.587794

[14]

Surf. Sci. (1996) 10.1016/0039-6028(96)00532-8

[15]

Phys. Rev. Lett. (1994) 10.1103/physrevlett.73.716

[16]

Physica (Amsterdam) (1967) 10.1016/0031-8914(67)90062-6

[17]

Phys. Rev. B (1996)

[18]

Appl. Phys. Lett. (1990) 10.1063/1.103987

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References

Details

Published: Nov 01, 1997
Vol/Issue: 82(9)
Pages: 4489-4492

Authors

Y

Y. T. Dai

Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China

J

J. C. Fan

Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China

Y

Yaojing Chen

Department of Physics, National Taiwan University, Taipei, Taiwan, Republic of China

R

R. M. Lin

Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

S

Sun-Mi Lee

Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

H

Hung-Wei Lin

Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, Republic of China

Cite This Article

Y. T. Dai, J. C. Fan, Yaojing Chen, et al. (1997). Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses. Journal of Applied Physics, 82(9), 4489-4492. https://doi.org/10.1063/1.366255

Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses

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