Device simulations of perovskite transistors containing mobile ions and their relevance to experimental data

Doaa Shamalia; Nir Tessler

doi:10.1063/5.0195682

journal article Open Access Feb 08, 2024

Device simulations of perovskite transistors containing mobile ions and their relevance to experimental data

Doaa Shamalia

Nir Tessler

Journal of Applied Physics Vol. 135 No. 6 · AIP Publishing

View at Publisher Save 10.1063/5.0195682

Abstract

We present a device simulation of lead-halide perovskite-based thin film transistors (TFTs) containing mobile charged species to provide physical reasoning for the various experimental reports. We study the output characteristics for a range of scan duration (1/speed), average mobile ion densities, and N- and P-channel TFTs. We then directly compare our results to published data by Zeidell et al. [Adv. Electron. Mater. 4(12), 1800316 (2018)] and show that if the transistor’s measurement procedure is such that the ions’ effects are apparent, and then, our model can resolve the sign of the mobile ions in their MAPbI3−xClx TFTs (cations) and provide a good estimate of their density (∼1017 cm−3 at 200 k). Interestingly, we find that effects previously associated with channel screening are due to the ion-blocking of the charge extraction and that the incomplete saturation often reported is due to ion-induced channel shortening. Utilizing the same perovskite materials as in solar cells would allow researchers to improve their understanding of the mechanisms governing solar photovoltaics and improve their performance.

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Metrics

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Citations

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References

Details

Published: Feb 08, 2024
Vol/Issue: 135(6)
License: View

Authors

D

Doaa Shamalia

Sara and Moshe Zisapel Nano-electronic Center, Electrical and Computer Electronics, Technion Israel Institute of Technology , Haifa 32000, Israel

N

Nir Tessler

Sara and Moshe Zisapel Nano-electronic Center, Electrical and Computer Electronics, Technion Israel Institute of Technology , Haifa 32000, Israel

Funding

Ministry of Innovation, Science and Technology Israel

Cite This Article

Doaa Shamalia, Nir Tessler (2024). Device simulations of perovskite transistors containing mobile ions and their relevance to experimental data. Journal of Applied Physics, 135(6). https://doi.org/10.1063/5.0195682

Device simulations of perovskite transistors containing mobile ions and their relevance to experimental data

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