Carrier-induced change in refractive index of InP, GaAs and InGaAsP

B.R. Bennett; R.A. Soref; J.A. Del Alamo

doi:10.1109/3.44924

journal article Jan 01, 1990

Carrier-induced change in refractive index of InP, GaAs and InGaAsP

IEEE Journal of Quantum Electronics Vol. 26 No. 1 pp. 113-122 · Institute of Electrical and Electronics Engineers (IEEE)

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References

40

[1]

10.1109/3.7097

[2]

10.1016/0038-1101(87)90032-3

[3]

10.1063/1.1663645

[4]

pikhtin "Refraction of light in semiconductors (review)" Sov Phys ?Semicond (1988)

[5]

bogdanov "Effect of doping on the refractive index of indium phosphide in the region of the intrinsic absorption edge" Opt Spectrosc (USSR) (1987)

[6]

yas'kov "Influence of doping on the dispersion of the optical refractive index of semiconductors" Sov Phys ?Semicond (1983)

[7]

10.1117/12.967524

[8]

10.1063/1.330480

[9]

GalnAsP Alloy Semiconductors (1982)

[10]

10.1063/1.1662823

[11]

10.1109/jqe.1987.1073276

[12]

10.1063/1.100296

[13]

yariv Optical Electronics (1985)

[14]

10.1063/1.90452

[15]

10.1103/physrev.133.a1653

[16]

10.1103/physrevb.5.594

[17]

10.1103/physrev.126.405

[18]

10.1088/0022-3719/17/34/012

[19]

10.1063/1.339777

[20]

10.1063/1.1658341

[21]

10.1063/1.321903

[22]

10.1063/1.331213

[23]

10.1063/1.339048

[24]

10.1063/1.321330

[25]

10.1364/ol.12.001053

[26]

10.1109/jqe.1983.1071749

[27]

10.1063/1.93412

[28]

10.1109/50.4068

[29]

10.1103/physrev.93.632

[30]

10.1109/55.6936

[31]

10.1063/1.97695

[32]

10.1016/b978-0-408-70326-0.50007-7

[33]

10.1109/jqe.1985.1072804

[34]

10.1063/1.322626

[35]

10.1143/jjap.23.874

[36]

10.1016/0022-0248(82)90486-9

[37]

zverev "Mechanism of band gap variation in heavily doped gallium arsenide" Sov Phys ?Semicond (1977)

[38]

10.1063/1.334786

[39]

10.1063/1.329371

[40]

10.1103/physrevb.24.1971

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858

Citations

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References

Details

Published: Jan 01, 1990
Vol/Issue: 26(1)
Pages: 113-122
License: View

Authors

B

B.R. Bennett

Naval Research Laboratory, Washington, DC 20375, USA

Cite This Article

B.R. Bennett, R.A. Soref, J.A. Del Alamo (1990). Carrier-induced change in refractive index of InP, GaAs and InGaAsP. IEEE Journal of Quantum Electronics, 26(1), 113-122. https://doi.org/10.1109/3.44924

Carrier-induced change in refractive index of InP, GaAs and InGaAsP

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