Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs

V. S. Pershenkov; D. V. Savchenkov; A. S. Bakerenkov; V. N. Ulimov

doi:10.1134/s1063739710020046

journal article Mar 01, 2010

Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs

V. S. Pershenkov D. V. Savchenkov A. S. Bakerenkov V. N. Ulimov

Russian Microelectronics Vol. 39 No. 2 pp. 91-99 · Pleiades Publishing Ltd

View at Publisher Save 10.1134/s1063739710020046

Topics

No keywords indexed for this article. Browse by subject →

References

19

[1]

Pease, R.L., Schrimpf, R.D., and Fleetwood, D.M., ELDRS in Bipolar Linear Circuits: A Review, IEEE Trans. Nucl. Sci., 2009, vol. 57. 10.1109/tns.2008.2011485

[2]

Enlow, E.W., Pease, R.L., Combs, W.E., Schrimpf, R.D., and Nowlin, R.N., Response of Advanced Bipolar Processes to Ionizing Radiation, IEEE Trans. Nucl. Sci., 1991, vol. 38, no. 6, pp. 1342–1351. 10.1109/23.124115

[3]

Fleetwood, D.M., Kosier, S.L., Nowlin, R.N., Schrimpf, R.D., Reber, R.A., DeLaus, M., Winokur, P.S., Wei, A., Combs, W.E., and Pease, R.L., Physical Mechanisms Contributing to Enhanced Bipolar Gain Degradation at Low Dose Rates, IEEE Trans. Nucl. Sci., 1994, vol. 41, no. 6, pp. 1871–1883. 10.1109/23.340519

[4]

Belyakov, V.V., Pershenkov, V.S., Shalnov, A.V., and Shvetzov-Shilovsky, I.N., Use of MOS Structures for the Investigation of Low-Dose-Rate Effects in Bipolar Transistors, IEEE Trans. Nucl. Sci., 1995, vol. 42, no. 6, pp. 1660–1666. 10.1109/23.488763

[5]

Zebrev, G.I., Modeling and Simulation of the Enhanced Low-Dose-Rate Sensitivity of Thick Isolating Layers in Advanced ICs, Mikroelektronika, 2006, vol. 35, no. 3, pp. 209–216 [Russ. Microelectron. (Engl. Transl.), vol. 35, no. 3, pp. 177–184].

[6]

Rashkeev, S.N., Cirba, C.R., Fleetwood, D.M., Schrimpf, R.D., Witczak, S.C., Michez, A., and Pantelides, S.T., Physical Model for Enhanced Interface-Trap Formation at Low Dose Rates, IEEE Trans. Nucl. Sci., 2002, vol. 49, no. 6, pp. 2650–2655. 10.1109/tns.2002.805387

[7]

Boch, J., Saigne, F., Schrimpf, R.D., Vaille, J.-R., Dusseau, L., and Lorfevre, E., Physical Model for the Low-Dose-Rate Effect in Bipolar Devices, IEEE Trans. Nucl. Sci., 2006, vol. 54, no. 6, pp. 3655–3660. 10.1109/tns.2006.886008

[8]

Hjalmarson, H.P., Pease, R.L., Witczak, S.C., Shaneyfelt, M.R., Schwank, J.R., Edwards, A.H., Hembree, C.E., and Mattson, T.R., Mechanisms for Radiation Dose-Rate Sensitivity of Bipolar Transistors, IEEE Trans. Nucl. Sci., 2003, vol. 50, no. 6, pp. 1901–1909. 10.1109/tns.2003.821803

[9]

Pershenkov, V.S., Savchenkov, D.V., Bakerenkov, A.S., and Egorov, A.S., Calculation of Surface Recombination Current in Bipolar Microelectronic Structures Subjected to Ionizing Radiation, Mikroelektronika, 2009, vol. 38, no. 1, pp. 21–33 [Russ. Microelectron. (Engl. Transl.), vol. 38, no. 1, pp. 17–29].

[10]

Ionizing Radiation Effects in MOS Devices and Circuits, Ma, T.P. and Dressendorfer, P.V., Eds., New York: Wiley, 1989, ch. 4.

[11]

McLean, F.B., Two-Stage Model, IEEE Trans. Nucl. Sci., 1980, vol. 27, no. 6, pp. 1651–1659. 10.1109/tns.1980.4331084

[12]

Lai, S.K., Interface Trap Generation in Silicon Dioxide When Electrons Are Captured by Trapped Holes, J. Appl. Phys., 1983, vol. 54, pp. 2540–2546. 10.1063/1.332323

[13]

McWhorter, P.J., Miller, S.L., and Miller, W.M., Modeling the Anneal of Radiation-Induced Trapped Holes in a Varying Thermal Environment, IEEE Trans. Nucl. Sci., 1990. vol. 37, no. 6, pp. 1682–1689. 10.1109/23.101177

[14]

Lelis, A.J., Boesch, H.E., Oldham, T.R., and McLean, F.B., Reversibility of Trapped Hole Annealing, IEEE Trans. Nucl. Sci., 1988, vol. 35, no. 6, pp. 1186–1191. 10.1109/23.25437

[15]

Emelianov, V.V., Sogoyan, A.V., Meshurov, O.V., Ulimov, V.N., and Pershenkov, V.S., Modeling the Field and Thermal Dependence of Radiation-Induced Charge Annealing in MOS Devices, IEEE Trans. Nucl. Sci., 1996, vol. 43, no. 6, pp. 2572–2578. 10.1109/23.556838

[16]

Pershenkov, V.S., Cherepko, S.V., Sogoyan, A.V., Belyakov, V.V., Ulimov, V.N., Abramov, V.V., Shalnov, A.V., and Rusanovsky, V.I., Proposed Two-Level Acceptor-Donor (AD) Center and Nature of Switching Traps in Irradiated MOS Structures, IEEE Trans. Nucl. Sci., 1996, vol. 43, no. 6, pp. 2579–2587. 10.1109/23.556839

[17]

McLean, F.B., Generic Impulse Response Function for MOS Systems and Its Application to Linear Response Analysis, IEEE Trans. Nucl. Sci., 1988, vol. 35, no. 6, pp. 1178–1185. 10.1109/23.25436

[18]

Witczak, S.C., Schrimpf, R.D., Galloway, K.F., Fleetwood, D.M., Pease, R.L., Puhl, J.M., Schmidt, D.M., Combs, W.E., and Suehle, J.S., Accelerated Tests for Simulating Low Dose Rate Gain Degradation of Lateral and Substrate PNP Bipolar Junction Transistors, IEEE Trans. Nucl. Sci., 1996, vol. 43, no. 6, pp. 3151–3160. 10.1109/23.556919

[19]

Freitag, R.K. and Brown, D.B., Study of Low-Dose-Rate Effects on Commercial Linear Bipolar ICs, IEEE Trans. Nucl. Sci., 1998, vol. 45, no. 6, pp. 2649–2658. 10.1109/23.736510

Metrics

20

Citations

19

References

Details

Published: Mar 01, 2010
Vol/Issue: 39(2)
Pages: 91-99
License: View

Authors

Cite This Article

V. S. Pershenkov, D. V. Savchenkov, A. S. Bakerenkov, et al. (2010). Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs. Russian Microelectronics, 39(2), 91-99. https://doi.org/10.1134/s1063739710020046

Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs

You May Also Like