journal article Jan 01, 2016

System-on-chip: Specifics of radiation behavior and estimation of radiation hardness

View at Publisher Save 10.1134/s1063739716010066
Topics

No keywords indexed for this article. Browse by subject →

References
20
[1]
Nemudrov, V. and Martin, G., Sistemy-na-kristalle. Proektirovanie i razvitie (Systems on Crystal. Design and Development), Moscow: Tekhnosfera, 2004.
[2]
Shagurin, I.I., Systems on crystal. Features of realization and application prospects, Elektron. Komp., 2009, no. 1, pp. 37–39.
[3]
Sogoyan, A.V., Chumakov, A.I., and Nikiforov, A.Y., Method for predicting cmos parameter degradation due to ionizing radiation with regard to operating time and conditions, Russ. Microelectron., 1999, vol. 28, no. 4, pp. 224–235.
[4]
Chumakov, A.I., Nikiforov, A.Y., Telets, V.A., et al., IC space radiation effects experimental simulation and estimation methods, Rad. Meas., 1999, no. 5, pp. 547–552. 10.1016/s1350-4487(99)00227-9
[5]
Sogoyan, A.V., Artamonov, A.S., Nikiforov, A.Y., and Boychenko, D.V., Method for integrated circuits total ionizing dose hardness testing based on combined gamma and X-ray irradiation facilities, Facta Univ., Ser.: Electron. Energet., 2014, vol. 27, no. 3, pp. 329–338. 10.2298/fuee1403329s
[6]
Kalashnikov, O. and Nikiforov, A., TID behavior of complex multifunctional VLSI devices, in Proceedings of the 26th International Conference on Microelectronics ICM 2014, Doha, Qatar, December 15–18, 2014, pp. 455–458.
[7]
Pershenkov, V.S., Chumakov, A.I., Nikiforov, A.Y., et al., Methods for the prediction of total-dose effects on modern integrated semiconductor devices in space: a review, Russ. Microelectron., 2003, vol. 32, no. 1, pp. 25–38. 10.1023/a:1021809802818
[8]
Boruzdina, A.B., Ulanova, A.V., Grigor’ev, N.G., and Nikiforov, A.Y., Radiation-induced degradation in the dynamic parameters of memory chips, Russ. Microelectron., 2012, vol. 41, no. 4, pp. 259–265. 10.1134/s106373971204004x
[9]
Chumakov, A.I., Vasil’ev, A.L., Kozlov, Kol’tsov, D.O., Krinitskii, A.V., Pechenkin, A.A., Tararaksin, A.S., and Yanenko, A.V., Single-event-effect prediction for ICs in a space environment, Russ. Microelectron., 2010, vol. 39, no. 2, pp. 74–78. 10.1134/s1063739710020022
[10]
Petrov, A.G., Vasil’ev, A.L., Ulanova, A.V., et al., Flash memory cells data loss caused by total ionizing dose and heavy ions, Centr. Eur. J. Phys., 2014, vol. 12, no. 10, pp. 725–729.
[11]
White, D., Considerations Surrounding Single Event Effects in FPGAs, ASICs, and Processors, WP402 (v1.0.1), 2012.
[12]
Bobrovsky, D., Kalashnikov, O., and Nekrasov, P., An estimate of the FPGA sensitivity to effects of single nuclear particles, Russ. Microelectron., 2012, vol. 41, no. 4, pp. 226–230. 10.1134/s1063739712040038
[13]
Kirgizova, A., Nikiforov, A., Grigor’ev, Poljakov, I.V., and Skorobogatov, P.K., Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology, Russ. Microelectron., 2006, vol. 35, no. 3, pp. 162–176. 10.1134/s106373970603005x
[14]
Kalashnikov, I., Demidov, A., Nikiforov, A., et al., Integrating analog-to-digital converter radiation hardness test technique and results, IEEE Trans. Nucl. Sci., 1998, vol. 45, pp. 2611–2615. 10.1109/23.736504
[15]
Elesin, V.V., Transient radiation effects in microwave monolithic integrated circuits based on heterostructure field-effect transistors: experiment and model, Russ. Microelectron., 2014, vol. 43, no. 2, pp. 139–147. 10.1134/s106373971402005x
[16]
Gromov, D., Elesin, V., Petrov, G., Bobrinetskii, I.I., and Nevolin, V.K., Radiation effects in nanoelectronic elements, Semiconductors, 2010, vol. 44, no. 13, pp. 1669–1702. 10.1134/s1063782610130166
[17]
Akhmetov, A., Boychenko, D., Bobrovskiy, D., et al., System on module total ionizing dose distribution modeling, in Proceedings of the 26th International Conference on Microelectronics ICM 2014, pp. 329–331.
[18]
Bobrovskii, D.V., Davydov, G.G., Petrov, A.G., et al., Implementation of the basic methods of ECB radiation tests based on hardware and software equipment of National Instruments, Izv. Vyssh. Uchebn. Zaved., Elektron., 2012, no. 5(97), pp. 91–104.
[19]
Nekrasov, P.V., Demidov, A.A., and Kalashnikov, O.A., Functional checks of microprocessors during radiation tests, Instrum. Exp. Tech., 2009, vol. 52, no. 2, pp. 196–199. 10.1134/s0020441209020092
[20]
Elesin, V.V., Nikiforov, A.Yu., Telets, V.A., and Chukov, G.V., The complex of methodology, hardware and software for automated parameter studies of microwave semiconductor IC during radiation resistance tests, Spetstekh. Svyaz’, 2011, pp. 28–32.
Metrics
22
Citations
20
References
Details
Published
Jan 01, 2016
Vol/Issue
45(1)
Pages
33-40
License
View
Cite This Article
O. A. Kalashnikov, P. V. Nekrasov, A. Yu. Nikiforov, et al. (2016). System-on-chip: Specifics of radiation behavior and estimation of radiation hardness. Russian Microelectronics, 45(1), 33-40. https://doi.org/10.1134/s1063739716010066
Related

You May Also Like

Luminescent Properties of ZnO Films Doped with Group-IB Acceptors

A. N. Gruzintsev, V. T. Volkov · 2002

31 citations

Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs

V. S. Pershenkov, D. V. Savchenkov · 2010

20 citations

Bidomain Ferroelectric Crystals: Properties and Prospects of Application

I. V. Kubasov, A. M. Kislyuk · 2021

20 citations

An estimate of the FPGA sensitivity to effects of single nuclear particles

D. V. Bobrovskii, O. A. Kalashnikov · 2012

18 citations