Study of a MHEMT heterostructure with an In0.4Ga0.6As channel MBE-grown on a GaAs substrate using reciprocal space mapping

A. N. Aleshin; A. S. Bugaev; M. A. Ermakova; O. A. Ruban

doi:10.1134/s1063782615080035

journal article Aug 01, 2015

Study of a MHEMT heterostructure with an In0.4Ga0.6As channel MBE-grown on a GaAs substrate using reciprocal space mapping

A. N. Aleshin A. S. Bugaev M. A. Ermakova O. A. Ruban

Semiconductors Vol. 49 No. 8 pp. 1039-1044 · Pleiades Publishing Ltd

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Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate

A. N. Aleshin, A. S. Bugaev · 2019

Semiconductors

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Published: Aug 01, 2015
Vol/Issue: 49(8)
Pages: 1039-1044
License: View

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Cite This Article

A. N. Aleshin, A. S. Bugaev, M. A. Ermakova, et al. (2015). Study of a MHEMT heterostructure with an In0.4Ga0.6As channel MBE-grown on a GaAs substrate using reciprocal space mapping. Semiconductors, 49(8), 1039-1044. https://doi.org/10.1134/s1063782615080035

Study of a MHEMT heterostructure with an In0.4Ga0.6As channel MBE-grown on a GaAs substrate using reciprocal space mapping

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