Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate

A. N. Aleshin; A. S. Bugaev; O. A. Ruban; V. V. Saraikin; N. Yu. Tabachkova; I. V. Shchetinin

doi:10.1134/s1063782619080025

journal article Aug 01, 2019

Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate

A. N. Aleshin A. S. Bugaev O. A. Ruban V. V. Saraikin N. Yu. Tabachkova I. V. Shchetinin

Semiconductors Vol. 53 No. 8 pp. 1066-1074 · Pleiades Publishing Ltd

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Published: Aug 01, 2019
Vol/Issue: 53(8)
Pages: 1066-1074
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A. N. Aleshin, A. S. Bugaev, O. A. Ruban, et al. (2019). Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate. Semiconductors, 53(8), 1066-1074. https://doi.org/10.1134/s1063782619080025

Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate

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