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journal article Jan 01, 2006

Seed Layer Free Conformal Ruthenium Film Deposition on Hole Substrates by MOCVD Using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium

Kazuhisa Kawano Atsushi Nagai ORCID Hiroaki Kosuge Tetsuo Shibutami Noriaki Oshima Hiroshi Funakubo ORCID
Electrochemical and Solid-State Letters Vol. 9 No. 7 pp. C107 · The Electrochemical Society
View at Publisher Save 10.1149/1.2200011
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References
10
[5]
Lee Electrochem. Solid-State Lett. (1999)
[10]
Brekel Philips Res. Rep. (1977)
Metrics
28
Citations
10
References
Details
Published
Jan 01, 2006
Vol/Issue
9(7)
Pages
C107
Authors
K
Kazuhisa Kawano
A
Atsushi Nagai
H
Hiroaki Kosuge
T
Tetsuo Shibutami
N
Noriaki Oshima
H
Hiroshi Funakubo
Cite This Article
Kazuhisa Kawano, Atsushi Nagai, Hiroaki Kosuge, et al. (2006). Seed Layer Free Conformal Ruthenium Film Deposition on Hole Substrates by MOCVD Using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium. Electrochemical and Solid-State Letters, 9(7), C107. https://doi.org/10.1149/1.2200011
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