Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer

Maya N. Nair; Irene Palacio; Arlensiú Celis; Alberto Zobelli; Alexandre Gloter; Stefan Kubsky; Jean-Philippe Turmaud; Matthew Conrad; Claire Berger; Walter de Heer; Edward H. Conrad; Amina Taleb-Ibrahimi; Antonio Tejeda

doi:10.1021/acs.nanolett.7b00509

journal article Mar 30, 2017

Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer

Maya N. Nair Irene Palacio Arlensiú Celis Alberto Zobelli

Alexandre Gloter Stefan Kubsky Jean-Philippe Turmaud Matthew Conrad Claire Berger Walter de Heer Edward H. Conrad Amina Taleb-Ibrahimi Antonio Tejeda

Nano Letters Vol. 17 No. 4 pp. 2681-2689 · American Chemical Society (ACS)

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Details

Published: Mar 30, 2017
Vol/Issue: 17(4)
Pages: 2681-2689

Authors

M

Maya N. Nair

UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette, France; Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât. 510, F-91405 Orsay Cedex, France

I

Irene Palacio

UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette, France

A

Arlensiú Celis

Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât. 510, F-91405 Orsay Cedex, France; Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette, France

A

Alberto Zobelli

Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât. 510, F-91405 Orsay Cedex, France

A

Alexandre Gloter

Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât. 510, F-91405 Orsay Cedex, France

S

Stefan Kubsky

Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette, France

J

Jean-Philippe Turmaud

School of Physics, The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, United States

M

Matthew Conrad

School of Physics, The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, United States

C

Claire Berger

School of Physics, The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, United States; CNRS/Institut Neél, BP166, 38042 Grenoble, France

W

Walter de Heer

School of Physics, The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, United States

E

Edward H. Conrad

School of Physics, The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, United States

A

Amina Taleb-Ibrahimi

UR1 CNRS/Synchrotron SOLEIL, Saint-Aubin, 91192 Gif sur Yvette, France

A

Antonio Tejeda

Laboratoire de Physique des Solides, CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât. 510, F-91405 Orsay Cedex, France; Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, 91192 Gif sur Yvette, France

Funding

Agence Nationale de la Recherche Award: ANR-12-BS04-0017

European Commission

Division of Materials Research Award: DMR-1401193

Air Force Office of Scientific Research Award: FA9550-13-0217

Division of Electrical, Communications and Cyber Systems Award: 1506006

FACE Foundation

Cite This Article

Maya N. Nair, Irene Palacio, Arlensiú Celis, et al. (2017). Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer. Nano Letters, 17(4), 2681-2689. https://doi.org/10.1021/acs.nanolett.7b00509

Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer

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