Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

C. Riedl; C. Coletti; T. Iwasaki; A. A. Zakharov; U. Starke

doi:10.1103/physrevlett.103.246804

journal article Dec 10, 2009

Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

C. Riedl

C. Coletti T. Iwasaki A. A. Zakharov U. Starke

Physical Review Letters Vol. 103 No. 24 · American Physical Society (APS)

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Published: Dec 10, 2009
Vol/Issue: 103(24)
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Cite This Article

C. Riedl, C. Coletti, T. Iwasaki, et al. (2009). Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation. Physical Review Letters, 103(24). https://doi.org/10.1103/physrevlett.103.246804

Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

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