Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts

Yan Liu; Xueying Zhao; Ziyin Lin; Ching-Ping Wong

doi:10.1021/am4046519

journal article Nov 26, 2013

Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts

Yan Liu

Xueying Zhao

Ziyin Lin Ching-Ping Wong

ACS Applied Materials & Interfaces Vol. 6 No. 1 pp. 575-584 · American Chemical Society (ACS)

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107

Citations

38

References

Details

Published: Nov 26, 2013
Vol/Issue: 6(1)
Pages: 575-584

Authors

Y

Yan Liu

School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332, United States

X

Xueying Zhao

School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332, United States

Z

Ziyin Lin

School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332, United States

C

Ching-Ping Wong

School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332, United States; Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong

Funding

National Science Foundation Award: CMMI #1130876

Cite This Article

Yan Liu, Xueying Zhao, Ziyin Lin, et al. (2013). Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts. ACS Applied Materials & Interfaces, 6(1), 575-584. https://doi.org/10.1021/am4046519

Uniform Vertical Trench Etching on Silicon with High Aspect Ratio by Metal-Assisted Chemical Etching Using Nanoporous Catalysts

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